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1. WO2020112782 - 1-METHYL-1-ISO-PROPOXY-SILACYCLOALKANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM

Publication Number WO/2020/112782
Publication Date 04.06.2020
International Application No. PCT/US2019/063264
International Filing Date 26.11.2019
IPC
C23C 16/448 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/505 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
50using electric discharges
505using radio frequency discharges
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/40 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
CPC
C03C 17/30
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
28with organic material
30with silicon-containing compounds
C03C 2218/153
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
2218Methods for coating glass
10Deposition methods
15from the vapour phase
152by cvd
153by plasma-enhanced cvd
C23C 16/401
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
401containing silicon
C23C 16/50
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
H01L 21/02126
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02126the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
Applicants
  • VERSUM MATERIALS US, LLC [US]/[US]
Inventors
  • ENTLEY, William, Robert
  • ACHTYL, Jennifer, Lynn Anne
  • VRTIS, Raymond, Nicholas
  • RIDGEWAY, Robert, Gordon
  • LEI, Xinjian
Agents
  • ROSSI, Joseph, D.
  • CASEY, Kevin, R.
  • FORET, Philip, J.
  • SPLETZER, Christopher, M.
  • O'DONOGHUE, Elizabeth, M.
Priority Data
62/771,93327.11.2018US
62/878,85026.07.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) 1-METHYL-1-ISO-PROPOXY-SILACYCLOALKANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM
(FR) 1-MÉTHYL-1-ISO-PROPOXY-SILACYCLOALCANES ET FILMS D'ORGANOSILICIUM DENSES FABRIQUÉS À PARTIR DE CES DERNIERS
Abstract
(EN)
A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising 1-methyl- 1 -iso-propoxy-silacyclopentane or 1 -methyl-1 -iso-propoxy-silacyclobutane; and applying energy to the gaseous composition comprising 1 -methyl-1 -iso-propoxy-silacyclopentane or 1 -methyl-1 -iso-propoxy-silacyclobutane in the reaction chamber to induce reaction of the gaseous composition comprising 1 -methyl-1 -iso-propoxy-silacyclopentane or 1 -methyl- 1 -iso- propoxy-silacyclobutane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from 2.70 to 3.20, an elastic modulus of from 11 to 25 GPa, and an at. % carbon of from 12 to 31 as measured by XPS.
(FR)
L'invention concerne un procédé de fabrication d'un film d'organosilicium dense présentant des propriétés mécaniques améliorées, le procédé comprenant les étapes consistant : à fournir un substrat à l'intérieur d'une chambre de réaction ; à introduire dans la chambre de réaction une composition gazeuse comprenant du 1-méthyl-1-iso-propoxy-silacyclopentane ou du 1-méthyl-1-iso-propoxy-silacyclobutane ; et à appliquer de l'énergie à la composition gazeuse comprenant du 1-méthyl-1-iso-propoxy-silacyclopentane ou du 1-méthyl-1-iso-propoxy-silacyclobutane dans la chambre de réaction pour induire une réaction de la composition gazeuse comprenant du 1-méthyl-1-iso-propoxy-silacyclopentane ou du 1-méthyl-1-iso-propoxy-silacyclobutane pour déposer un film d'organosilicium sur le substrat, le film d'organosilicium ayant une constante diélectrique de 2,70 à 3,20, un module élastique de 11 à 25 GPa, et un % de carbone at. de 12 à 31 tel que mesuré par spectroscopie XPS.
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