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1. WO2020112710 - 3D INTERPOSER WITH THROUGH GLASS VIAS - METHOD OF INCREASING ADHESION BETWEEN COPPER AND GLASS SURFACES AND ARTICLES THEREFROM

Publication Number WO/2020/112710
Publication Date 04.06.2020
International Application No. PCT/US2019/063154
International Filing Date 26.11.2019
IPC
H01L 21/48 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/06-H01L21/326201
H01L 23/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
14characterised by the material or its electrical properties
15Ceramic or glass substrates
H01L 23/498 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488consisting of soldered or bonded constructions
498Leads on insulating substrates
CPC
H01L 21/486
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4846Leads on or in insulating or insulated substrates, e.g. metallisation
486Via connections through the substrate with or without pins
H01L 23/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
14characterised by the material or its electrical properties
15Ceramic or glass substrates
H01L 23/49827
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements
488consisting of soldered ; or bonded; constructions
498Leads, ; i.e. metallisations or lead-frames; on insulating substrates, ; e.g. chip carriers
49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
Applicants
  • CORNING INCORPORATED [US]/[US]
Inventors
  • BOOKBINDER, Dana Craig
  • GROSS, Timothy Michael
  • HUANG, Tian
  • JIN, Yuhui
Agents
  • SHORT, Svetlana Z.
Priority Data
62/771,87827.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) 3D INTERPOSER WITH THROUGH GLASS VIAS - METHOD OF INCREASING ADHESION BETWEEN COPPER AND GLASS SURFACES AND ARTICLES THEREFROM
(FR) INTERPOSEUR 3D À TROUS D'INTERCONNEXION TRAVERSANT LE VERRE - PROCÉDÉ D'AUGMENTATION DE L'ADHÉRENCE ENTRE DES SURFACES EN CUIVRE ET EN VERRE ET ARTICLES ASSOCIÉS
Abstract
(EN)
In some embodiments, a method comprises forming a pilot hole or damage track through a laminate glass structure using a laser. The laminate glass structure comprising a first layer and a second layer adjacent to the first layer. The first layer is formed from a first glass composition. The second layer is formed from a second glass composition different from the first glass composition. After forming the pilot hole, the laminate glass structure is exposed to etching conditions that etch the first glass composition at a first etching rate and the second glass composition at a second etching rate, wherein the first etch rate is different from the second etch rate, to form an etched hole.
(FR)
Dans certains modes de réalisation, un procédé comprend la formation d'un trou pilote ou d'une piste d'endommagement à travers une structure de verre stratifié à l'aide d'un laser. La structure de verre stratifié comporte une première couche et une seconde couche adjacente à la première couche. La première couche est formée à partir d'une première composition de verre. La seconde couche est formée à partir d'une seconde composition de verre différente de la première composition de verre. Après la formation du trou pilote, la structure de verre stratifié est exposée à des conditions de gravure qui attaque la première composition de verre à une première vitesse de gravure et la seconde composition de verre à une seconde vitesse de gravure, la première vitesse de gravure étant différente de la seconde vitesse de gravure, pour former un trou gravé.
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