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1. WO2020112554 - SURFACE CONTAMINANT REDUCTION IN CONTROLLED ENVIRONMENTS

Publication Number WO/2020/112554
Publication Date 04.06.2020
International Application No. PCT/US2019/062821
International Filing Date 22.11.2019
IPC
C23C 22/00 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
22Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
C23C 26/00 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
26Coating not provided for in groups C23C2/-C23C24/87
H01L 21/475 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
46Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/36-H01L21/428142
461to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
469to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
475using masks
CPC
C23C 16/042
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
04Coating on selected surface areas, e.g. using masks
042using masks
C23C 16/4401
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
H01L 21/02041
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
H01L 21/02271
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Applicants
  • ZYVEX LABS, LLC [US]/[US]
  • THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS [US]/[US]
Inventors
  • OWEN, James
  • BALLARD, Joshua Brendan
  • LYDING, Joseph W.
  • RANDALL, John
Agents
  • BOSTROM, Brett
  • BAJAJ, Raghav
  • BECKER, Jeffrey
  • BLIKSHTEYN, Dina
  • BROWN, Randall
  • FOSTER, Theodore
  • FOWLES, Adam
  • HALBUR, Zachary
  • JOHN, Thomas
  • JOHNSON, Dustin
  • JOHNSON, Ryan
  • KELTON, Thomas
  • LOWES, J. Andrew
  • MAUCOTEL, Jordan
  • MCCARTHY, Wil
  • MCCOMBS, David L.
  • NGUYEN, Thuc
  • NICKOLS, Julie
  • SUAREZ, Vera
  • VARGHESE, Kelvin
  • WANG, Alan
  • WILKINS, Clint
  • WOLFSON, Jeffrey A.
  • YIM, Susan
  • ZIEMIAN, Robert
  • WEBB, Greg
Priority Data
16/691,34721.11.2019US
62/773,04029.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SURFACE CONTAMINANT REDUCTION IN CONTROLLED ENVIRONMENTS
(FR) RÉDUCTION DE CONTAMINANTS DE SURFACE DANS DES ENVIRONNEMENTS CONTRÔLÉS
Abstract
(EN)
A method for reducing the amount of mobile surface molecules present on a substrate surface includes providing a substrate having an area of interest, where the substrate is disposed within a controlled environment (e.g., a UHV environment). In some embodiments, a mask is positioned in a first position over the area of interest. Thereafter, a first deposition of a reactive material from a reactive material source is performed onto a first substrate region. The mask, while in the first position, blocks deposition of the reactive material within the area of interest. The mask may then positioned in a second position over the area of interest. In some embodiments, a second deposition of the reactive material from the reactive material source is performed to circumscribe the area of interest with the reactive material. In various embodiments, mobile surface molecules are captured using the deposited reactive material.
(FR)
La présente invention concerne un procédé de réduction de la quantité de molécules de surface mobiles présentes sur une surface de substrat comprenant la fourniture d'un substrat comportant une zone d'intérêt, le substrat étant disposé dans un environnement contrôlé (p. ex., un environnement UHV). Selon certains modes de réalisation de l'invention, un masque est positionné dans une première position sur la zone d'intérêt. Ensuite, un premier dépôt d'une matière réactive provenant d'une source de matière réactive est effectué sur une première zone de substrat. Le masque, lorsqu'il est positionné dans la première position, bloque le dépôt de la matière réactive dans la zone d'intérêt. Le masque peut ensuite être positionné dans une seconde position sur la zone d'intérêt. Selon certains modes de réalisation de l'invention, un second dépôt de la matière réactive provenant de la source de matière réactive est effectué pour circonscrire la zone d'intérêt avec la matière réactive. Selon divers modes de réalisation de l'invention, les molécules de surface mobiles sont capturées à l'aide de la matière réactive déposée.
Also published as
Latest bibliographic data on file with the International Bureau