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1. WO2020112544 - CHALCOGENIDE MEMORY DEVICE COMPONENTS AND COMPOSITION

Publication Number WO/2020/112544
Publication Date 04.06.2020
International Application No. PCT/US2019/062801
International Filing Date 22.11.2019
IPC
H01L 45/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H01L 27/24 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
G11C 13/00 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
CPC
C03C 3/321
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
3Glass compositions
32Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
321Chalcogenide glasses, e.g. containing S, Se, Te
G11C 11/221
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
22using ferroelectric elements
221using ferroelectric capacitors
G11C 11/2259
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
22using ferroelectric elements
225Auxiliary circuits
2259Cell access
G11C 13/0004
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0004comprising amorphous/crystalline phase transition cells
G11C 13/003
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
003Cell access
G11C 2213/30
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
2213Indexing scheme relating to G11C13/00 for features not covered by this group
30Resistive cell, memory material aspects
Applicants
  • MICRON TECHNOLOGY [US]/[US]
Inventors
  • VARESI, Enrico
  • FANTINI, Paolo
  • FRATIN, Lorenzo
  • LENGADE, Swapnil, A.
Agents
  • HARRIS, Philip
Priority Data
10201810518W26.11.2018SG
16/228,46920.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) CHALCOGENIDE MEMORY DEVICE COMPONENTS AND COMPOSITION
(FR) COMPOSANTS ET COMPOSITION DE DISPOSITIF DE MÉMOIRE À BASE DE CHALCOGÉNURE
Abstract
(EN)
Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A component of a memory cell, such as a selector device, storage device, or self-selecting memory device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. The chalcogenide material, for instance, may have a composition of selenium, germanium, and at least one of boron, aluminum, gallium, indium, or thallium. The chalcogenide material may in some cases also include arsenic, but may in some cases lack arsenic.
(FR)
L'invention concerne des systèmes, des dispositifs et des procédés associés à ou qui utilisent des composants et des compositions de mémoire à base de chalcogénure. Un composant d'une cellule de mémoire, tel qu'un dispositif de sélection, un dispositif de stockage ou un dispositif de mémoire à sélection automatique, peut être constitué d'une composition de matériau de chalcogénure. Un matériau de chalcogénure peut avoir une composition qui comprend un ou plusieurs éléments du groupe bore, tels que le bore, l'aluminium, le gallium, l'indium ou le thallium. Le matériau de chalcogénure, par exemple, peut avoir une composition de sélénium, de germanium et d'au moins un élément parmi le bore, l'aluminium, le gallium, l'indium ou le thallium. Le matériau de chalcogénure peut, dans certains cas, comprendre également de l'arsenic, mais peut dans certains cas être exempt d'arsenic.
Also published as
Latest bibliographic data on file with the International Bureau