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1. WO2020112388 - METAL INTERCONNECT STRUCTURE BY SUBTRACTIVE PROCESS

Publication Number WO/2020/112388
Publication Date 04.06.2020
International Application No. PCT/US2019/061718
International Filing Date 15.11.2019
IPC
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
CPC
H01L 21/768
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
Applicants
  • LAM RESEARCH CORPORATION [US]/[US]
Inventors
  • MOUNTSIER, Thomas Weller
Agents
  • HO, Michael T.
  • WEAVER, Jeffrey K.
  • AUSTIN, James E.
  • VILLENEUVE, Joseph M.
  • SAMPSON, Roger S.
  • BERGIN, Denise S.
  • GRIFFITH, John F.
  • SCHOLZ, Christian D.
Priority Data
62/774,04630.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METAL INTERCONNECT STRUCTURE BY SUBTRACTIVE PROCESS
(FR) STRUCTURE D'INTERCONNEXION MÉTALLIQUE OBTENUE PAR PROCESSUS SOUSTRACTIF
Abstract
(EN)
A metal interconnect structure of an integrated circuit may be fabricated by forming one or more vias subsequent to formation of two contiguous metallization layers. The one or more vias are fully aligned with a first metallization layer and a second metallization layer. Hardmask material or other insulating material is left on top of the first metallization layer and the second metallization layer during fabrication of the metal interconnect structure. Some of the hardmask material or other insulating material is etched and subsequently backfilled with electrically conductive material to form the one or more vias, where the one or more vias are contained within a space that does not overlap with surrounding dielectric material.
(FR)
L'invention porte sur une structure d'interconnexion métallique d'un circuit intégré, qui peut être fabriquée par formation d'un ou de plusieurs trous d'interconnexion après la formation de deux couches de métallisation contiguës. Le ou les trous d'interconnexion sont entièrement alignés avec une première couche de métallisation et une seconde couche de métallisation. Un matériau de masque dur ou autre matériau isolant est laissé au-dessus de la première couche de métallisation et de la seconde couche de métallisation pendant la fabrication de la structure d'interconnexion métallique. Une partie du matériau de masque dur ou autre matériau isolant est gravée et ensuite remplie avec un matériau électroconducteur pour former le ou les trous d'interconnexion, le ou les trous d'interconnexion étant contenus dans un espace qui ne chevauche pas un matériau diélectrique environnant.
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