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1. WO2020112330 - SEQUENTIAL DEPOSITION AND HIGH FREQUENCY PLASMA TREATMENT OF DEPOSITED FILM ON PATTERNED AND UN-PATTERNED SUBSTRATES

Publication Number WO/2020/112330
Publication Date 04.06.2020
International Application No. PCT/US2019/060625
International Filing Date 08.11.2019
IPC
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
C23C 16/458 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
CPC
C23C 16/345
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34Nitrides
345Silicon nitride
C23C 16/56
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
56After-treatment
H01J 2237/3321
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
32Processing objects by plasma generation
33characterised by the type of processing
332Coating
3321CVD [Chemical Vapor Deposition]
H01J 2237/3341
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
32Processing objects by plasma generation
33characterised by the type of processing
334Etching
3341Reactive etching
H01J 37/32155
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32137controlling of the discharge by modulation of energy
32155Frequency modulation
H01J 37/32192
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32192Microwave generated discharge
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • VATS, Vinayak, Veer
  • YU, Hang
  • KRAUS, Philip, Allan
  • KAMATH, Sanjay, G.
  • DURAND, William, John
  • KALUTARAGE, Lakmal, Charidu
  • MALLICK, Abhijit, B.
  • LI, Changling
  • PADHI, Deenesh
  • SALY, Mark, Joseph
  • CHUA, Thai, Cheng
  • BALSEANU, Mihaela, A.
Agents
  • BERNADICOU, Michael, A.
  • BRASK, Justin, K.
Priority Data
16/676,09706.11.2019US
62/774,02230.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEQUENTIAL DEPOSITION AND HIGH FREQUENCY PLASMA TREATMENT OF DEPOSITED FILM ON PATTERNED AND UN-PATTERNED SUBSTRATES
(FR) DÉPÔT SÉQUENTIEL ET TRAITEMENT PAR PLASMA À HAUTE FRÉQUENCE D'UN FILM DÉPOSÉ SUR DES SUBSTRATS À MOTIFS ET SANS MOTIF
Abstract
(EN)
Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.
(FR)
Des modes de réalisation de la présente invention comprennent des procédés de formation de films de nitrure de silicium de haute qualité. Selon un mode de réalisation, un procédé de dépôt d'un film sur un substrat peut consister à former un film de nitrure de silicium sur une surface du substrat dans un premier volume de traitement avec un processus de dépôt, et à traiter le film de nitrure de silicium dans un second volume de traitement, le traitement du film de nitrure de silicium comprenant l'exposition du film à un plasma induit par une source de plasma à haute fréquence modulaire. Selon un mode de réalisation, un potentiel de gaine du plasma est inférieur à 100 V, et une densité de puissance de la source de plasma à haute fréquence est supérieure ou égale à environ 5 W/cm2, supérieure ou égale à environ 10 W/cm2 ou supérieure ou égale à environ 20 W/cm2.
Also published as
Latest bibliographic data on file with the International Bureau