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1. WO2020112283 - GAIN-DEPENDENT IMPEDANCE MATCHING AND LINEARITY

Publication Number WO/2020/112283
Publication Date 04.06.2020
International Application No. PCT/US2019/058070
International Filing Date 25.10.2019
IPC
H03F 3/195 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189High-frequency amplifiers, e.g. radio frequency amplifiers
19with semiconductor devices only
195in integrated circuits
H03F 1/56 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
56Modifications of input or output impedances, not otherwise provided for
H03F 1/22 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
22by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
H03G 3/14 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
GCONTROL OF AMPLIFICATION
3Gain control in amplifiers or frequency changers
02Manually-operated control
14in frequency-selective amplifiers
H03G 3/00 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
GCONTROL OF AMPLIFICATION
3Gain control in amplifiers or frequency changers
H03G 1/00 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
GCONTROL OF AMPLIFICATION
1Details of arrangements for controlling amplification
CPC
H03F 1/223
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
22by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
223with MOSFET's
H03F 1/565
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
56Modifications of input or output impedances, not otherwise provided for
565using inductive elements
H03F 2200/21
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
21Bias resistors are added at the input of an amplifier
H03F 2200/222
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
222A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
H03F 2200/294
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
294the amplifier being a low noise amplifier [LNA]
H03F 2200/387
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
Applicants
  • QUALCOMM INCORPORATED [US]/[US]
Inventors
  • MEDRA, Alaaeldien Mohamed Abdelrazek
  • YANG, David Zixiang
  • WANG, Kevin Hsi Huai
  • ZHAI, Chen
  • GATTA, Francesco
Agents
  • KASHIWADA, Erin L.
Priority Data
16/200,40526.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) GAIN-DEPENDENT IMPEDANCE MATCHING AND LINEARITY
(FR) LINÉARITÉ ET ADAPTATION D'IMPÉDANCE DÉPENDANT DU GAIN
Abstract
(EN)
An integrated circuit is disclosed for gain-dependent impedance matching and linearity. The integrated circuit includes at least two amplifier branches, an input inductor, and at least two degeneration inductors. Each amplifier branch includes a node, an input transistor, and a cascode stage connected between a drain of the input transistor and the node. Respective nodes of the at least two amplifier branches are connected together and respective gates of the input transistors of the at least two amplifier branches are connected together. The input inductor is connected to the respective gates, and the at least two degeneration inductors are connected between respective sources of the input transistors of the at least two amplifier branches and a ground. The at least two degeneration inductors are configured to establish a magnetic coupling with the input inductor and establish another magnetic coupling between each other.
(FR)
Un circuit intégré pour une linéarité et une adaptation d'impédance dépendant du gain est divulgué. Le circuit intégré comprend au moins deux branches d'amplificateur, un inducteur d'entrée et au moins deux inducteurs de dégénération. Chaque branche d'amplificateur comprend un nœud, un transistor d'entrée et un étage cascode connecté entre un drain du transistor d'entrée et le nœud. Des nœuds respectifs des deux branches d'amplificateur ou plus sont connectés l'un à l'autre et des grilles respectives des transistors d'entrée des deux ou plus de deux branches d'amplificateur sont connectées l'une à l'autre. L'inducteur d'entrée est connecté aux grilles respectives, et les au moins deux inducteurs de dégénération sont connectés entre des sources respectives des transistors d'entrée des deux branches d'amplificateur ou plus et une masse. Les au moins deux inducteurs de dégénération sont configurés pour établir un couplage magnétique avec l'inducteur d'entrée et établir un autre couplage magnétique entre eux.
Also published as
Latest bibliographic data on file with the International Bureau