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1. WO2020112279 - STACKED SENSOR WITH INTEGRATED CAPACITORS

Publication Number WO/2020/112279
Publication Date 04.06.2020
International Application No. PCT/US2019/057752
International Filing Date 24.10.2019
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
CPC
H01L 27/14634
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14634Assemblies, i.e. Hybrid structures
H01L 27/14636
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14636Interconnect structures
H01L 27/1469
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
1469Assemblies, i.e. hybrid integration
H04N 5/379
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
379Details of the architecture or circuitry being divided to different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
Applicants
  • RAYTHEON COMPANY [US]/[US]
Inventors
  • MALONE, Neil, R.
  • KILCOYNE, Sean, P.
  • HARRIS, Micky
Agents
  • LAWRENCE, M., Brad
Priority Data
16/201,63327.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) STACKED SENSOR WITH INTEGRATED CAPACITORS
(FR) CAPTEUR EMPILÉ À CONDENSATEURS INTÉGRÉS
Abstract
(EN)
A three-dimensional (3D) stack is provided and includes a capacitor layer and an integrated circuit (IC) layer. The capacitor layer includes capacitors and capacitor layer connectors respectively communicative with corresponding capacitors. The IC layer is stacked vertically with the capacitor layer and is hybridized to a detector. The IC layer includes IC layer connectors respectively communicative with corresponding capacitor layer connectors.
(FR)
L'invention concerne un empilement tridimensionnel (3D) qui est fourni et comprend une couche de condensateur et une couche de circuit intégré (CI). La couche de condensateur comprend des condensateurs et des connecteurs de couche de condensateur respectivement en communication avec des condensateurs correspondants. La couche de CI est empilée verticalement avec la couche de condensateur et est hybridée à un détecteur. La couche de CI comprend des connecteurs de couche de CI respectivement en communication avec des connecteurs de couche de condensateur correspondants.
Also published as
Latest bibliographic data on file with the International Bureau