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1. WO2020112005 - SEMICONDUCTOR ASSEMBLY WITH DISCRETE ENERGY STORAGE COMPONENT

Publication Number WO/2020/112005
Publication Date 04.06.2020
International Application No. PCT/SE2019/051176
International Filing Date 20.11.2019
IPC
H01G 4/008 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
005Electrodes
008Selection of materials
H01G 4/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
018Dielectrics
06Solid dielectrics
H01L 23/498 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488consisting of soldered or bonded constructions
498Leads on insulating substrates
H01L 23/538 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
538the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/64 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
H01L 27/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
CPC
B82B 1/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
1Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
H01G 4/008
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
005Electrodes
008Selection of materials
H01G 4/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
018Dielectrics
06Solid dielectrics
H01L 23/49816
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements
488consisting of soldered ; or bonded; constructions
498Leads, ; i.e. metallisations or lead-frames; on insulating substrates, ; e.g. chip carriers
49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
49816Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
H01L 23/49822
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements
488consisting of soldered ; or bonded; constructions
498Leads, ; i.e. metallisations or lead-frames; on insulating substrates, ; e.g. chip carriers
49822Multilayer substrates
Applicants
  • SMOLTEK AB [SE]/[SE]
Inventors
  • KABIR, M Shafiqul
  • DESMARIS, Vincent
  • ANDERSSON, Rickard
  • SALEEM, Muhammad Amin
  • BYLUND, Maria
  • JOHANSSON, Anders
  • LILJEBERG, Fredrik
  • TIVERMAN, Ola
Agents
  • KRANSELL & WENNBORG KB
Priority Data
1851460-426.11.2018SE
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR ASSEMBLY WITH DISCRETE ENERGY STORAGE COMPONENT
(FR) ENSEMBLE À SEMI-CONDUCTEUR POURVU D'UN COMPOSANT DE STOCKAGE D'ÉNERGIE DISCRET
Abstract
(EN)
A semiconductor assembly, comprising: a first semiconductor die including processing circuitry and pads, said first semiconductor die having a first surface and a second surface opposite the first surface; a second semiconductor die including memory circuitry and pads, said second semiconductor die being arranged on one of the first surface and the second surface of said first semiconductor die, and pads of said second semiconductor die being coupled to pads of said first semiconductor die; and at least a first capacitor having terminals, said first capacitor being arranged on one of the first surface and the second surface of said first semiconductor die and the terminals of said capacitor being coupled to pads of said first semiconductor die.
(FR)
L'invention porte sur un ensemble à semi-conducteur, comprenant : une première puce de semi-conducteur comprenant un circuit de traitement et des plots, ladite première puce de semi-conducteur présentant une première surface et une seconde surface opposée à la première surface ; une seconde puce de semi-conducteur comprenant un circuit de mémoire et des plots, ladite seconde puce de semi-conducteur étant agencée sur l'une de la première surface et de la seconde surface de ladite première puce de semi-conducteur, et des plots de ladite seconde puce de semi-conducteur étant couplés à des plots de ladite première puce de semi-conducteur ; et au moins un premier condensateur ayant des bornes, ledit premier condensateur étant agencé sur l'une de la première surface et de la seconde surface de ladite première puce de semi-conducteur, et les bornes dudit condensateur étant couplées à des plots de ladite première puce de semi-conducteur.
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