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1. WO2020111943 - ELECTROCHEMICAL DOPING OF SEMICONDUCTOR MATERIALS

Publication Number WO/2020/111943
Publication Date 04.06.2020
International Application No. PCT/NL2019/050791
International Filing Date 29.11.2019
IPC
H01L 51/40 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
40Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 21/388 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
38Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions
388using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes
CPC
H01L 21/388
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
34the devices having semiconductor bodies not provided for in groups ; H01L21/0405, H01L21/0445; , H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
38Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
388using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
H01L 51/002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
002Making n- or p-doped regions
Applicants
  • TECHNISCHE UNIVERSITEIT DELFT [NL]/[NL]
Inventors
  • HOUTEPEN, Arjan Jeroen
  • EELKEMA, Rienk
  • GUÐJÓNSDÓTTIR, Sólrún
  • EREN, Hamit
Agents
  • EDP PATENT ATTORNEYS B.V.
Priority Data
202211030.11.2018NL
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ELECTROCHEMICAL DOPING OF SEMICONDUCTOR MATERIALS
(FR) DOPAGE ÉLECTROCHIMIQUE DE MATÉRIAUX SEMI-CONDUCTEURS
Abstract
(EN)
The invention provides a method for providing a doped semiconductor layer, wherein the method comprises: (i) a charge injection stage comprising imposing a potential difference between a layer arranged on an electrically conductive substrate and a reference electrode, wherein the layer comprises a semiconductor material, and wherein the layer is in fluid contact with an electrolyte solution comprising ions, wherein the layer is porous to the electrolyte solution, thereby introducing ions into the layer; and (ii) an immobilization stage comprising immobilizing the ions in the layer; thereby providing the doped semiconductor layer.
(FR)
L'invention concerne un procédé de fourniture d'une couche semi-conductrice dopée, le procédé comprenant : (I) une étape d'injection de charge consistant à appliquer une différence de potentiel entre une couche disposée sur un substrat électriquement conducteur et une électrode de référence, la couche comprenant un matériau semi-conducteur, et la couche étant en contact fluide avec une solution électrolytique comprenant des ions, la couche étant poreuse à la solution électrolytique, ce qui permet d'introduire des ions dans la couche; et (ii) une étape d'immobilisation consistant à immobiliser les ions dans la couche, ce qui permet d'obtenir la couche semi-conductrice dopée.
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