Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020111862 - MAGNETIC SENSOR AND HALL SENSOR, EACH USING ANOMALOUS HALL EFFECT, AND METHOD FOR MANUFACTURING HALL SENSOR

Publication Number WO/2020/111862
Publication Date 04.06.2020
International Application No. PCT/KR2019/016704
International Filing Date 29.11.2019
IPC
G01R 33/07 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices
07Hall-effect devices
G01R 33/00 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
H01L 43/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
06Hall-effect devices
CPC
G01R 33/00
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
G01R 33/07
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
07Hall effect devices
H01L 43/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
06Hall-effect devices
Applicants
  • 세종대학교 산학협력단 INDUSTRY ACADEMY COOPERATION FOUNDATION OF SEJONG UNIVERSITY [KR]/[KR]
  • 주식회사 나노게이트 NANOGATE [KR]/[KR]
Inventors
  • 김태완 KIM, Tae Wan
Agents
  • 특허법인 이상 E-SANG PATENT & TRADEMARK LAW FIRM
Priority Data
10-2018-015236630.11.2018KR
10-2018-015236730.11.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) MAGNETIC SENSOR AND HALL SENSOR, EACH USING ANOMALOUS HALL EFFECT, AND METHOD FOR MANUFACTURING HALL SENSOR
(FR) CAPTEUR MAGNÉTIQUE ET CAPTEUR À EFFET HALL, CHACUN UTILISANT UN EFFET HALL ANORMAL ET PROCÉDÉ PERMETTANT DE FABRIQUER UN CAPTEUR À EFFET HALL
(KO) 이상 홀 효과를 이용하는 자기 센서, 홀 센서 및 홀 센서의 제조방법
Abstract
(EN)
A magnetic sensor using the anomalous Hall effect is disclosed. In order to form a Hall voltage corresponding to a change in the applied magnetic field, the magnetic sensor comprises a ferromagnetic material and non-magnetic metal layers placed on and under the ferromagnetic material. The linearity and saturation magnetization of the magnetic sensor depend on the thickness of the non-magnetic metal layers and the thickness of the ferromagnetic material. Further, a Hall sensor using the anomalous Hall effect is disclosed. The Hall sensor comprises a ferromagnetic layer and non-magnetic metal layers placed with respect to the ferromagnetic layer, and CoFeSiB which is the ferromagnetic layer has a thickness of 10Å to 45Å. Due to the interface-induced effect of the non-magnetic metal layers, a magnetization easy axis is formed in a direction perpendicular to the interface. Further, the Hall sensor has a rhombus-shaped sensing area, a line-shaped electrode wiring part, and a pad part which are formed by one patterning process.
(FR)
La présente invention concerne un capteur magnétique utilisant l'effet Hall anormal. Pour former une tension de Hall correspondant à un changement du champ magnétique appliqué, le capteur magnétique comprend un matériau ferromagnétique et des couches métalliques non magnétiques placées sur le matériau ferromagnétique et sous celui-ci. La linéarité et la magnétisation de saturation du capteur magnétique dépendent de l'épaisseur des couches métalliques non magnétiques et de l'épaisseur du matériau ferromagnétique. En outre, l'invention porte sur un capteur à effet Hall utilisant l'effet Hall anormal. Le capteur à effet Hall comprend une couche ferromagnétique et des couches métalliques non magnétiques placées par rapport à la couche ferromagnétique, et le CoFeSiB, qui est la couche ferromagnétique, présente une épaisseur comprise entre 10 Å et 45 Å. En raison de l'effet induit par l'interface des couches métalliques non magnétiques, un axe facile de magnétisation est formé dans une direction perpendiculaire à l'interface. En outre, le capteur à effet Hall comporte une zone de détection en forme de losange, une partie de câblage d'électrode en forme de ligne et une partie plage d'accueil qui sont formées par un processus de formation de motif.
(KO)
이상 홀 효과를 이용하는 자기 센서가 개시된다. 인가되는 자계의 변화에 상응하는 홀 전압의 형성을 위해 강자성체를 중심으로 상부 및 하부에 비자성 금속층이 배치된다. 비자성 금속층의 두께 및 강자성체의 두께에 의해 자기 센서의 선형성 및 포화 자화는 의존한다. 또한, 이상 홀 효과를 이용하는 홀 센서가 개시된다. 강자성층을 중심으로 비자성 금속층들이 구성되며, 강자성층인 CoFeSiB는 10Å 내지 45Å의 두께를 가진다. 비자성 금속층들의 계면 유도 작용에 의해 계면에 수직한 방향으로 자화 용이축이 형성된다. 또한, 홀 센서는 한번의 패터닝 공정으로 마름모 형상의 감지 영역과, 라인 형태의 전극 배선부 및 패드부를 가진다.
Latest bibliographic data on file with the International Bureau