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1. WO2020111790 - METHOD FOR MANUFACTURING DIAMOND SUBSTRATE

Publication Number WO/2020/111790
Publication Date 04.06.2020
International Application No. PCT/KR2019/016511
International Filing Date 27.11.2019
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H01L 21/324 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
CPC
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
H01L 21/324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Applicants
  • 한국산업기술대학교산학협력단 KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION [KR]/[KR]
Inventors
  • 남옥현 NAM, Ok Hyun
  • 최의호 CHOI, Ui Ho
  • 유근호 YOO, Geun Ho
Agents
  • 손기호 SON, Ki Ho
Priority Data
10-2018-015257930.11.2018KR
10-2019-008871823.07.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) METHOD FOR MANUFACTURING DIAMOND SUBSTRATE
(FR) PROCÉDÉ DE FABRICATION DE SUBSTRAT EN DIAMANT
(KO) 다이아몬드 기판 제조 방법
Abstract
(EN)
The present invention relates to a method for manufacturing a diamond substrate, and the method for manufacturing a diamond substrate, of the present invention, is a method using a photoresist pattern and a heat treatment and the like for an air gap formation film material so as to form, on a substrate such as sapphire (Al2O3), an air gap structure having a crystalline correlation with a lower substrate, and then grow a diamond. The method simplifies a process during the heterogeneous growth of large-area/large-diameter single crystal diamond and lowers costs, and mitigates the stress caused by a difference in lattice constants and thermal expansion coefficients between a heterogeneous substrate and diamond and reduces defects or cracks even during drops in temperature, thereby manufacturing a single crystal diamond substrate with high quality and facilitating self-separation of the diamond substrate from the heterogeneous substrate.
(FR)
La présente invention concerne un procédé de fabrication d'un substrat en diamant, et le procédé de fabrication d'un substrat en diamant, est un procédé utilisant un motif de résine photosensible et un traitement thermique et similaire pour un matériau de film de formation d'entrefer de façon à former, sur un substrat tel que le saphir (Al2O3), une structure d'entrefer ayant une corrélation cristalline avec un substrat inférieur, puis faire croitre un diamant. Le procédé simplifie un processus pendant la croissance hétérogène d'un diamant monocristallin de grande surface/grand diamètre et réduit les coûts, et atténue la contrainte provoquée par une différence de constantes de réseau et de coefficients de dilatation thermique entre un substrat hétérogène et un diamant et réduit les défauts ou fissures même pendant des chutes de température, ce qui permet de fabriquer un substrat de diamant monocristallin avec une qualité élevée et de faciliter l'auto-séparation du substrat de diamant à partir du substrat hétérogène.
(KO)
본 발명은 다이아몬드 기판 제조 방법에 관한 것으로서, 본 발명의 다이아몬드 기판 제조 방법은, 사파이어(Al2O3) 등의 기판 상에 포토레지스트 패턴 및 에어갭 형성막 물질을 열처리 등을 이용하여 하부기판과의 결정적 상관성을 갖는 에어갭 구조를 형성한 후 다이아몬드를 성장시키는 방법이다. 이 방법을 통해 대면적/대구경 단결정 다이아몬드를 이종성장 시 공정을 간단하게 하고 비용을 낮추며, 이종기판과 다이아몬드 사이의 격자상수 및 열팽창계수 차이로 인한 응력을 완화시키고 온도 하강 시에도 결함이나 크랙 발생을 감소시켜 고품질의 단결정 다이아몬드 기판을 제작하고, 이종기판으로부터 다이아몬드 기판의 자가 분리가 용이하게 이루어질 수 있다.
Also published as
Latest bibliographic data on file with the International Bureau