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1. WO2020111789 - METHOD FOR MANUFACTURING ALUMINUM NITRIDE-BASED TRANSISTOR

Publication Number WO/2020/111789
Publication Date 04.06.2020
International Application No. PCT/KR2019/016510
International Filing Date 27.11.2019
IPC
H01L 29/778 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
CPC
H01L 29/778
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Applicants
  • 한국산업기술대학교산학협력단 KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION [KR]/[KR]
Inventors
  • 남옥현 NAM, Ok Hyun
  • 최의호 CHOI, Ui Ho
Agents
  • 손기호 SON, Ki Ho
Priority Data
10-2018-015257830.11.2018KR
10-2019-006267228.05.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) METHOD FOR MANUFACTURING ALUMINUM NITRIDE-BASED TRANSISTOR
(FR) PROCÉDÉ POUR FABRIQUER UN TRANSISTOR À BASE DE NITRURE D'ALUMINIUM
(KO) 질화알루미늄 기반 트랜지스터의 제조 방법
Abstract
(EN)
The present invention relates to a method for manufacturing an aluminum nitride-based transistor. An aluminum nitride (AlN)-based HEMT device of the present invention uses an AlN buffer layer, wherein an AlGaN composition variation layer is inserted in the interface of GaN/AlN to remove or inhibit the degree of formation of two-dimensional hole gas (2DHG), to thereby reduce the effect of Coulomb drag in a two-dimensional electron gas (2DEG) layer and improve the mobility of 2DEG.
(FR)
La présente invention concerne un procédé pour fabriquer un transistor à base de nitrure d'aluminium. Un dispositif HEMT à base de nitrure d'aluminium (AlN) selon la présente invention fait appel à une couche tampon d'AlN, une couche de variation de composition d'AlGaN étant insérée à l'interface de GaN/AlN pour éliminer ou inhiber le degré de formation de gaz de trou bidimensionnel (2DHG), afin de réduire ainsi l'effet de traînée de Coulomb dans une couche de gaz d'électrons bidimensionnel (2DEG) et d'améliorer la mobilité du 2DEG.
(KO)
본 발명은 질화알루미늄 기반 트랜지스터의 제조 방법에 관한 것으로서, 본 발명의 질화알루미늄(AlN) 기반의 HEMT 소자는, AlN 버퍼층을 사용하되 GaN/AlN 계면에 AlGaN 조성변화층을 삽입하여 2DHG(이차원정공가스)의 생성 정도를 제거 또는 억제해 2DEG(이차원전자가스) 층에 쿨롱끌림(Coulomb drag)의 영향을 감소시키고 2DEG(이차원전자가스)의 이동도를 향상시킬 수 있다.
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