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1. WO2020111752 - SEMICONDUCTOR DEVICE HAVING NEGATIVE DIFFERENTIAL TRANSCONDUCTANCE CHARACTERISTIC AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2020/111752
Publication Date 04.06.2020
International Application No. PCT/KR2019/016418
International Filing Date 27.11.2019
IPC
H01L 45/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
CPC
H01L 45/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
Applicants
  • 성균관대학교산학협력단 RESEARCH BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY [KR]/[KR]
Inventors
  • 박진홍 PARK, Jin Hong
  • 최재웅 CHOI, Jae Woong
  • 김관호 KIM, Kwan Ho
  • 이성주 LEE, Sung Joo
  • 임지혜 LIM, Ji Hye
  • 안드레예프막심 ANDREEV, Maksim
Agents
  • 심경식 SHIM, Kyoung-Shik
  • 홍성욱 HONG, Sung-Wook
Priority Data
10-2018-014829527.11.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE HAVING NEGATIVE DIFFERENTIAL TRANSCONDUCTANCE CHARACTERISTIC AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR PRÉSENTANT UNE CARACTÉRISTIQUE DE TRANSCONDUCTANCE DIFFÉRENTIELLE NÉGATIVE ET SON PROCÉDÉ DE FABRICATION
(KO) 부성 미분 전달컨덕턴스 특성을 갖는 반도체 소자 및 그 제조 방법
Abstract
(EN)
A semiconductor device having a negative differential transconductance characteristic according to an embodiment of the present invention comprises: a substrate; a gate electrode formed on the substrate; an insulation layer formed on the gate electrode; a source electrode material layer formed on the insulation layer; a semiconductor material layer formed on the insulation layer and heterogeneously bonded to the source electrode material layer; a source electrode formed on the source electrode material layer; and a drain electrode formed on the semiconductor material layer. The source electrode material layer has a work function adjustable depending on a gate voltage applied through the gate electrode and shows a negative differential transconductance characteristic, depending on a level of the gate voltage.
(FR)
Un dispositif à semi-conducteur présentant une caractéristique de transconductance différentielle négative selon un mode de réalisation de la présente invention comprend : un substrat; une électrode de grille formée sur le substrat; une couche d'isolation formée sur l'électrode de grille; une couche de matériau d'électrode de source formée sur la couche d'isolation; une couche de matériau semi-conducteur formée sur la couche d'isolation et liée de manière hétérogène à la couche de matériau d'électrode de source; une électrode de source formée sur la couche de matériau d'électrode de source; et une électrode de drain formée sur la couche de matériau semi-conducteur. La couche de matériau d'électrode de source possède un travail de sortie réglable en fonction d'une tension de grille appliquée à travers l'électrode de grille et présente une caractéristique de transconductance différentielle négative, en fonction d'un niveau de la tension de grille.
(KO)
본 발명의 일 실시예에 따른 부성 미분 전달컨덕턴스 특성을 갖는 반도체 소자는 기판, 기판 상에 형성된 게이트 전극, 게이트 전극상에 형성된 절연층, 절연층 상에 형성된 소스 전극 물질층, 절연층 상에 형성되고, 소스 전극 물질층과 이종 접합하도록 형성된 반도체 물질층, 소스 전극 물질층 상에 형성된 소스 전극 및 반도체 물질층 상에 형성된 드레인 전극을 포함하되, 소스 전극 물질층은 게이트 전극을 통해 인가되는 게이트 전압에 따라 일함수가 조절되는 것이고, 게이트 전압의 크기에 따라 부성 미분 전달컨덕턴스 특성을 나타내는 것이다.
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