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1. WO2020111650 - PEROVSKITE LIGHT EMITTING DIODE

Publication Number WO/2020/111650
Publication Date 04.06.2020
International Application No. PCT/KR2019/015967
International Filing Date 20.11.2019
IPC
H01L 51/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
CPC
H01L 51/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
Applicants
  • 엘지디스플레이 주식회사 LG DISPLAY CO., LTD. [KR]/[KR]
  • 고려대학교 산학협력단 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION [KR]/[KR]
  • 울산과학기술원 UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY) [KR]/[KR]
Inventors
  • 우한영 WOO, Han Young
  • 장기석 CHANG, Kiseok
  • 송명훈 SONG, Myoung Hoon
  • 문정민 MOON, Jeong Min
  • 최수석 CHOI, Su Seok
  • 응웬탄루안 NGUYEN, Thanh Luan
  • 이승진 LEE, Seungjin
  • 장충현 JANG, Chung Hyeon
Agents
  • 특허법인(유한) 대아 DAE-A INTELLECTUAL PROPERTY CONSULTING
Priority Data
10-2018-015200930.11.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) PEROVSKITE LIGHT EMITTING DIODE
(FR) DIODE ÉLECTROLUMINESCENTE PÉROVSKITE
(KO) 페로브스카이트 발광 소자
Abstract
(EN)
The present invention relates to a perovskite light emitting diode. According to the present invention, the degradation of the characteristics of the light emitting device, caused by PEDOT:PSS, can be prevented by replacing PEDOT:PSS contained in a conventional hole transport layer with an anionic conjugated polymer having ammonium-based counter ions, and the light emission characteristics can be greatly improved by: passivating defects of a perovskite light emitting layer with a hole transport layer containing a conjugated polymer; and increasing crystal growth.
(FR)
La présente invention concerne une diode électroluminescente pérovskite. Selon la présente invention, la dégradation des caractéristiques du dispositif électroluminescent, provoquée par PEDOT : PSS, peut être empêchée en remplaçant le PEDOT : PSS contenu dans une couche de transport de trous classique avec un polymère conjugué anionique ayant des contre-ions à base d'ammonium, et les caractéristiques d'émission de lumière peuvent être considérablement améliorées par : la passivation de défauts d'une couche électroluminescente de pérovskite avec une couche de transport de trous contenant un polymère conjugué ; et l'augmentation de la croissance cristalline.
(KO)
본 발명은 페로브스카이트 발광 소자에 관한 것이다. 본 발명에 따르면, 종래의 정공 수송층에 포함된 PEDOT:PSS를 암모늄 계열 카운터 이온을 가지는 음이온성 공액 고분자로 대체함으로써 PEDOT:PSS에 의해 야기되는 발광 소자의 특성 저하를 방지하는 것이 가능할 뿐만 아니라, 공액 고분자를 포함하는 정공 수송층에 의한 페로브스카이트 발광층의 결함을 패시베이션하고 결정성장을 증대시키으로써 발광특성을 크게 향상시키는 것이 가능하다.
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