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1. WO2020111528 - TRANSISTOR, PANEL, AND METHOD FOR MANUFACTURING TRANSISTOR

Publication Number WO/2020/111528
Publication Date 04.06.2020
International Application No. PCT/KR2019/014271
International Filing Date 28.10.2019
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 29/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
CPC
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/66
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
Applicants
  • 엘지디스플레이 주식회사 LG DISPLAY CO., LTD. [KR]/[KR]
  • 한양대학교 산학협력단 INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY [KR]/[KR]
Inventors
  • 박진성 PARK, Jin Seong
  • 김민정 KIM, Min Jung
  • 최완호 CHOI, Wan Ho
  • 문정민 MOON, Jeong Min
  • 정순신 JUNG, Soon Shin
  • 송문봉 SONG, Moon Bong
  • 정지환 JUNG, Ji Hwan
  • 장기석 CHANG, Ki Seok
Agents
  • 특허법인(유한)유일하이스트 YUIL HIGHEST INTERNATIONAL PATENT AND LAW FIRM
Priority Data
10-2018-015202930.11.2018KR
10-2018-015479404.12.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) TRANSISTOR, PANEL, AND METHOD FOR MANUFACTURING TRANSISTOR
(FR) TRANSISTOR, PANNEAU ET PROCÉDÉ DE FABRICATION DE TRANSISTOR
(KO) 트랜지스터, 패널 및 트랜지스터의 제조방법
Abstract
(EN)
Embodiments of the present invention relate to a transistor, a panel, and a method for manufacturing the transistor and, more specifically, to a transistor, a panel comprising same, and a method for manufacturing the transistor, the transistor having excellent device characteristics by comprising: a first insulating film including a silicon oxide and contacting an oxide semiconductor layer; and a second insulating film including an oxide such as zirconium.
(FR)
Des modes de réalisation de la présente invention concernent un transistor, un panneau, et un procédé de fabrication du transistor et, plus spécifiquement, un transistor, un panneau le comprenant, et un procédé de fabrication du transistor, le transistor ayant d'excellentes caractéristiques de dispositif en ce qu'il comprend : un premier film isolant comprenant un oxyde de silicium et venant en contact avec une couche semi-conductrice d'oxyde; et un second film isolant comprenant un oxyde tel que le zirconium.
(KO)
본 발명의 실시예들은 트랜지스터, 패널 및 트랜지스터 제조방법에 관한 것으로서, 더욱 상세하게는, 실리콘 산화물을 포함하고 산화물 반도체층과 접촉하는 제1 절연막 및 지르코늄 등의 산화물을 포함하는 제2 절연막을 포함하여, 소자 특성이 우수한 트랜지스터, 이를 포함하는 패널 및 상기 트랜지스터의 제조방법을 제공할 수 있다.
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