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1. WO2020111429 - LIGHT EMITTING DEVICE

Publication Number WO/2020/111429
Publication Date 04.06.2020
International Application No. PCT/KR2019/008275
International Filing Date 05.07.2019
IPC
H01L 33/22 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/10 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
10with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 27/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
CPC
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
H01L 33/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
10with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
Applicants
  • 서울바이오시스 주식회사 SEOUL VIOSYS CO., LTD. [KR]/[KR]
Inventors
  • 이진웅 LEE, Jin Woong
  • 김경완 KIM, Kyoung Wan
  • 서덕일 SUH, Duk Il
  • 우상원 WOO, Sang Won
Agents
  • 박해찬 PARK, Hae Chan
Priority Data
10-2018-015276930.11.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) LIGHT EMITTING DEVICE
(FR) DISPOSITIF ÉLECTROLUMINESCENT
(KO) 발광 소자
Abstract
(EN)
A light emitting device is provided. The light emitting device comprises: a substrate; a plurality of protruding patterns arranged on the substrate and respectively comprising a first layer comprising a material identical to a material constituting the substrate, and a second layer arranged on the first layer and comprising a material different from the material constituting the substrate; and a light emitting part arranged in a first region of the substrate, wherein a second region includes a region between the first region and the outer periphery of the substrate, and the height of the protruding patterns arranged in the first region may be different from the height of the protruding patterns arranged in the second region.
(FR)
L'invention concerne un dispositif électroluminescent comprenant : un substrat; une pluralité de motifs en saillie disposés sur le substrat et comprenant respectivement une première couche renfermant un matériau identique à un matériau constituant le substrat, et une seconde couche agencée sur la première couche et renfermant un matériau différent du matériau constituant le substrat; et une partie électroluminescente agencée dans une première région du substrat, une seconde région comprenant une région entre la première région et la périphérie externe du substrat, et la hauteur des motifs en saillie agencés dans la première région pouvant être différente de la hauteur des motifs en saillie agencés dans la seconde région.
(KO)
발광 소자를 제공한다. 발광 소자는, 기판, 기판 상에 배치되며 기판을 구성하는 물질과 동일한 물질을 포함하는 제1 층과, 제1 층 상에 상기 기판을 구성하는 물질과 다른 물질을 포함하는 제2 층을 포함하는 복수의 돌출 패턴들, 및 기판의 제1 영역에 배치되는 발광부를 포함하되, 제2 영역은 제1 영역과 기판의 외곽 사이의 영역을 포함하며, 제1 영역에 배치된 돌출 패턴의 높이와 제2 영역에 배치된 돌출 패턴의 높이는 서로 상이할 수 있다.
Also published as
Latest bibliographic data on file with the International Bureau