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1. WO2020111422 - COLORLESS TRANSPARENT SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2020/111422
Publication Date 04.06.2020
International Application No. PCT/KR2019/007221
International Filing Date 14.06.2019
IPC
H01L 31/036 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
H01L 31/047 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
042PV modules or arrays of single PV cells
047PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
CPC
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/036
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
H01L 31/047
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
047PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
Applicants
  • 울산과학기술원 UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY) [KR]/[KR]
Inventors
  • 서관용 SEO, Kwan Yong
  • 이강민 LEE, Kang Min
Agents
  • 리앤목 특허법인 Y.P.LEE, MOCK & PARTNERS
Priority Data
10-2018-015084729.11.2018KR
10-2019-004982929.04.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) COLORLESS TRANSPARENT SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME
(FR) SUBSTRAT EN SEMICONDUCTEUR TRANSPARENT INCOLORE ET SON PROCÉDÉ DE FABRICATION
(KO) 무색 투명 반도체 기판 및 이의 제조방법
Abstract
(EN)
The present invention relates to a transparent semiconductor substrate and a method for manufacturing same, the transparent semiconductor substrate comprising: a semiconductor substrate including a first surface and a second surface opposite to the first surface; and a through hole penetrating the semiconductor substrate, wherein the through hole includes an inclined portion inclined with respect to the first surface and second surface, and the present invention provides a colorless transparent semiconductor which transmits all light in a visible light region so as to have colorless transparency and an improved viewing angle.
(FR)
La présente invention concerne un substrat en semiconducteur transparent et son procédé de fabrication, le substrat en semiconducteur transparent comprenant : un substrat en semiconducteur qui comporte une première surface et une deuxième surface opposée à la première surface ; et un trou traversant qui pénètre dans le substrat en semiconducteur. Le trou traversant comprend une portion inclinée par rapport à la première surface et à la deuxième surface, et la présente invention réalise un semiconducteur transparent incolore qui transmet toute la lumière dans une région de lumière visible de façon à avoir une transparence incolore et un angle de vue amélioré.
(KO)
본 발명은 제1면 및 상기 제1면의 반대측의 제2면을 포함하는 반도체 기판; 상기 반도체 기판을 관통하는 관통홀을 포함하고, 상기 관통홀은 상기 제1면 및 제2면에 대하여 경사진 경사부를 포함하는 투명 반도체 기판 및 이의 제조방법으로, 가시광 영역의 모든 광을 투과하여 무색 투명성을 보이고 시야각이 향상된 무색 투명 반도체를 제공한다.
Also published as
Latest bibliographic data on file with the International Bureau