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1. WO2020111391 - DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2020/111391
Publication Date 04.06.2020
International Application No. PCT/KR2019/002071
International Filing Date 20.02.2019
IPC
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/38 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/62 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
H01L 27/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
H01L 33/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Applicants
  • 삼성디스플레이 주식회사 SAMSUNG DISPLAY CO., LTD. [KR]/[KR]
Inventors
  • 강종혁 KANG, Jong Hyuk
  • 조현민 CHO, Hyun Min
  • 김대현 KIM, Dae Hyun
  • 임현덕 IM, Hyun Deok
Agents
  • 김두식 KIM, Doo Sik
  • 오종한 OH, Jong Han
  • 문용호 MOON, Yong Ho
Priority Data
10-2018-014863227.11.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF D'AFFICHAGE ET PROCÉDÉ DE FABRICATION ASSOCIÉ
(KO) 표시 장치 및 그의 제조 방법
Abstract
(EN)
A display device may comprise: a substrate including a display area and a non-display area; and a plurality of pixels provided in the display area and including a plurality of sub-pixels, each of which has a light-emitting area and a non-light-emitting area. Each of the sub-pixels may comprise: a pixel circuit unit including at least one transistor; and a display element layer including at least one light-emitting element which emits light and is connected to the transistor. The display element layer may comprise: a first electrode and a second electrode spaced apart from each other, the light-emitting element being disposed between the first and second electrodes; the light-emitting element connected to each of the first electrode and the second electrode; and a planarization layer disposed on the pixel circuit unit and in contact with at least a part of each of opposite ends of the light-emitting element. In a plan view, the planarization layer may overlap each of the first electrode and the second electrode.
(FR)
L'invention concerne un dispositif d'affichage pouvant comprendre : un substrat comprenant une zone d'affichage et une zone de non-affichage ; et une pluralité de pixels disposés dans la zone d'affichage et comprenant une pluralité de sous-pixels, chacun comportant une région d'émission et une région de non-émission. Chacun des sous-pixels peut comprendre : une unité circuit de pixel comprenant au moins un transistor ; et une couche d'élément d'affichage comprenant au moins un élément électroluminescent qui émet de la lumière et qui est connecté au transistor. La couche d'élément d'affichage peut comprendre : une première électrode et une seconde électrode espacées l'une de l'autre, l'élément électroluminescent étant disposé entre les première et seconde électrodes ; l'élément électroluminescent étant connecté à chacune de la première électrode et de la seconde électrode ; et une couche de planarisation disposée sur l'unité circuit de pixel et en contact avec au moins une partie de chacune des extrémités opposées de l'élément électroluminescent. Lorsqu'observée selon une vue en plan, la couche de planarisation peut chevaucher chacune de la première électrode et de la seconde électrode.
(KO)
표시 장치는, 표시 영역 및 비표시 영역을 포함한 기판; 상기 표시 영역에 제공되며, 발광 영역과 비발광 영역을 각각 갖는 복수의 서브 화소들을 구비한 복수의 화소들을 포함할 수 있다. 각 서브 화소는, 적어도 하나의 트랜지스터를 포함한 화소 회로부 및 광을 방출하는 상기 트랜지스터에 연결된 적어도 하나의 발광 소자를 구비한 표시 소자층을 포함할 수 있다. 상기 표시 소자층은, 상기 발광 소자를 사이에 두고 이격된 제1 전극과 제2 전극; 상기 제1 전극과 상기 제2 전극 각각에 연결된 상기 발광 소자; 및 상기 화소 회로부 상에 제공되며, 상기 발광 소자의 양 단부 각각의 적어도 일부를 접촉하는 평탄화층을 포함할 수 있다. 평면 상에서 볼 때, 상기 평탄화층은 상기 제1 전극과 상기 제2 전극에 각각 중첩할 수 있다.
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