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1. WO2020111321 - METHOD FOR MANUFACTURING INPUT AND OUTPUT CIRCUIT-EMBEDDED PACKAGE FOR POWER AMPLIFIER

Publication Number WO/2020/111321
Publication Date 04.06.2020
International Application No. PCT/KR2018/014926
International Filing Date 29.11.2018
IPC
H01L 23/495 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488consisting of soldered or bonded constructions
495Lead-frames
H01L 23/498 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488consisting of soldered or bonded constructions
498Leads on insulating substrates
H01L 23/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
CPC
H01L 23/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
H01L 23/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
14characterised by the material or its electrical properties
H01L 23/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
14characterised by the material or its electrical properties
15Ceramic or glass substrates
H01L 23/40
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
40Mountings or securing means for detachable cooling or heating arrangements
H01L 23/495
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements
488consisting of soldered ; or bonded; constructions
495Lead-frames ; or other flat leads
H01L 23/498
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements
488consisting of soldered ; or bonded; constructions
498Leads, ; i.e. metallisations or lead-frames; on insulating substrates, ; e.g. chip carriers
Applicants
  • 주식회사 웨이브피아 WAVEPIA CO.,LTD [KR]/[KR]
  • (주)코스텍시스 KOSTEC SYS. CO. LTD [KR]/[KR]
Inventors
  • 이상훈 LEE, Sang-Hun
  • 한규진 HAN, Kue-Jin
Agents
  • 전종일 JEON, Jong-Il
Priority Data
10-2018-015033129.11.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) METHOD FOR MANUFACTURING INPUT AND OUTPUT CIRCUIT-EMBEDDED PACKAGE FOR POWER AMPLIFIER
(FR) PROCÉDÉ DE FABRICATION D'UN BOÎTIER À CIRCUIT INTÉGRÉ INCORPORÉ D'ENTRÉE ET DE SORTIE POUR AMPLIFICATEUR DE PUISSANCE
(KO) 입출력회로가 내장된 전력 증폭기용 패키지의 제조 방법
Abstract
(EN)
The present invention provides a method for manufacturing an input and output circuit-embedded package for a power amplifier, comprising: a dielectric circuit board preparation step including the steps of forming, on a dielectric substrate, a power amplifier hole in which a power amplifier chip is to be arranged, printing an input matching network metal pattern on the left side of the power amplifier hole and an output matching network metal pattern on the right side of the power amplifier hole, and sintering the input matching network metal pattern and the output matching network metal pattern printed on the dielectric substrate; a step of etching an alloy (42), and performing nickel plating so as to prepare a lead frame; and a step of attaching a heat sink onto the lower surface of the dielectric circuit board, attaching the lead frame to the input matching network metal pattern and the output matching network metal pattern of the dielectric circuit board, and then plating, with nickel/gold, the input matching network metal pattern and the output matching network metal pattern of the dielectric circuit board and the lead frame.
(FR)
La présente invention concerne un procédé de fabrication d'un boîtier à circuit intégré incorporé d'entrée et de sortie pour un amplificateur de puissance, comprenant : une étape de préparation de carte de circuit imprimé diélectrique comprenant les étapes consistant à former, sur un substrat diélectrique, un trou d'amplificateur de puissance dans lequel une puce d'amplificateur de puissance doit être agencée, imprimer un motif métallique de réseau d'adaptation d'entrée sur le côté gauche du trou d'amplificateur de puissance et un motif métallique de réseau d'adaptation de sortie sur le côté droit du trou d'amplificateur de puissance, et fritter le motif métallique de réseau d'adaptation d'entrée et le motif métallique de réseau d'adaptation de sortie imprimé sur le substrat diélectrique ; une étape de gravure d'un alliage (42), et réaliser un placage de nickel de manière à préparer une grille de connexion ; et une étape de fixation d'un dissipateur thermique sur la surface inférieure de la carte de circuit diélectrique, à fixer la grille de connexion au motif métallique de réseau d'adaptation d'entrée et au motif métallique de réseau d'adaptation de sortie de la carte de circuit imprimé diélectrique, puis le placage, avec du nickel/de l'or, du motif métallique de réseau d'adaptation d'entrée et du motif métallique de réseau d'adaptation de sortie de la carte de circuit imprimé diélectrique et de la grille de connexion.
(KO)
본 발명은 유전체 기판에 전력 증폭기 칩이 배치될 전력 증폭기 홀을 형성하는 단계와, 상기 전력 증폭기 홀의 좌측에 입력 매칭 네트워크 금속 패턴을 인쇄하며 상기 전력 증폭기 홀의 우측에 출력 매칭 네트워크 금속 패턴을 인쇄하는 단계와, 상기 유전체 기판에 인쇄된 입력 매칭 네트워크 금속 패턴 및 출력 매칭 네트워크 금속 패턴을 소결하는 단계로 구성되는 유전체 회로 기판을 준비하는 단계, 합금(alloy) 42를 식각하고, 니켈로 도금하여 리드프레임을 준비하는 단계 및 상기 유전체 회로 기판의 하면에 상기 히트싱크를 부착하고, 상기 유전체 회로 기판의 입력 매칭 네트워크 금속 패턴 및 출력 매칭 네트워크 금속 패턴에 상기 리드프레임을 부착한 후에, 상기 유전체 회로 기판의 입력 매칭 네트워크 금속 패턴 및 출력 매칭 네트워크 금속 패턴 및 상기 리드프레임을 니켈/금으로 도금하는 단계를 포함하는 입출력회로가 내장된 전력 증폭기용 패키지의 제조 방법이 제공된다.
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