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1. WO2020111287 - LASER ELEMENT AND METHOD FOR PRODUCING SAME

Publication Number WO/2020/111287
Publication Date 04.06.2020
International Application No. PCT/KR2018/014667
International Filing Date 27.11.2018
IPC
H01S 5/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave
H04B 10/40 2013.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
BTRANSMISSION
10Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
40Transceivers
CPC
H01S 5/2031
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
2004Confining in the direction perpendicular to the layer structure
2018Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
2031characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
Applicants
  • (주)오이솔루션 OPTO ELECTRONICS SOLUTIONS [KR]/[KR]
Inventors
  • 윤기홍 YOON, Ki Hong
  • 최선재 CHOI, Seon Jae
Agents
  • 특허법인 다나 DANA PATENT LAW FIRM
Priority Data
10-2018-014753326.11.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) LASER ELEMENT AND METHOD FOR PRODUCING SAME
(FR) ÉLÉMENT LASER ET SON PROCÉDÉ DE PRODUCTION
(KO) 레이저 소자 및 그 제조방법
Abstract
(EN)
An embodiment of the present invention provides a laser element and a method for producing same, the laser element including: a first clad layer; an optical waveguide disposed on the first clad layer; a second clad layer disposed on the optical waveguide; a first electrode disposed on the second clad layer; and a dummy clad disposed on the optical waveguide and spaced apart from the second clad layer and the first electrode.
(FR)
La présente invention, selon un mode de réalisation, concerne un élément laser et son procédé de production, l'élément laser comprenant : une première couche de revêtement ; un guide d'ondes optique disposé sur la première couche de revêtement ; une seconde couche de revêtement disposée sur le guide d'ondes optique ; une première électrode disposée sur la seconde couche de revêtement ; et un revêtement factice disposé sur le guide d'ondes optique et espacé de la seconde couche de revêtement et de la première électrode.
(KO)
실시 예는, 제1 클래드층; 상기 제1 클래드층 상에 배치되는 광도파로; 상기 광도파로 상에 배치되는 제2 클래드층; 상기 제2 클래드층 상에 배치되는 제1 전극; 및 상기 광도파로 상에 배치되고, 상기 제2 클래드층 및 상기 제1 전극과 이격 배치되는 더미 클래드를 포함하는 레이저 소자 및 그 제조방법을 개시한다.
Also published as
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