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1. WO2020111277 - FILM MANUFACTURING METHOD, ORGANIC SEMICONDUCTOR ELEMENT MANUFACTURING METHOD, AND ORGANIC SEMICONDUCTOR ELEMENT

Publication Number WO/2020/111277
Publication Date 04.06.2020
International Application No. PCT/JP2019/046923
International Filing Date 29.11.2019
IPC
H05B 33/10 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
C23C 14/12 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
12Organic material
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
CPC
C23C 14/12
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
12Organic material
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H05B 33/10
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Applicants
  • 株式会社Kyulux KYULUX, INC. [JP]/[JP]
Inventors
  • 能塚 直人 NOTSUKA Naoto
  • 西出 順一 NISHIDE Junichi
  • 遠藤 礼隆 ENDO Ayataka
  • 垣添 勇人 KAKIZOE Hayato
Agents
  • 特許業務法人特許事務所サイクス SIKS & CO.
Priority Data
2018-22455630.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) FILM MANUFACTURING METHOD, ORGANIC SEMICONDUCTOR ELEMENT MANUFACTURING METHOD, AND ORGANIC SEMICONDUCTOR ELEMENT
(FR) PROCÉDÉ DE FABRICATION DE FILM, PROCÉDÉ DE FABRICATION D'ÉLÉMENT SEMI-CONDUCTEUR ORGANIQUE ET ÉLÉMENT SEMI-CONDUCTEUR ORGANIQUE
(JA) 膜の製造方法、有機半導体素子の製造方法および有機半導体素子
Abstract
(EN)
In the present invention, a film is formed by carrying out codeposition from a deposition source containing both a first compound which satisfies ΔEST(1)≤0.3eV and a second compound which satisfies ES1(1)>ES1(2). ΔEST(1) is the difference between the minimum excited singlet energy state ES1(1) of the first compound and the minimum excited triplet energy state of the first compound. ES1(2) is the minimum excited singlet energy state of the second compound.
(FR)
Dans la présente invention, un film est formé par réalisation d'un codépôt à partir d'une source de dépôt contenant à la fois un premier composé qui satisfait ΔEST(1)≤0.3eV et un second composé qui satisfait ES 1(1)>ES 1(2). ΔEST(1) est la différence entre l'état d'énergie singulet excité minimale ES 1(1) du premier composé et de l'état d'énergie de triplet excité minimale du premier composé. ES 1(2) est l'état d'énergie singulet excité minimale du second composé.
(JA)
ΔEST(1)≦0.3eVを満たす第1化合物とES1(1)>ES1(2)を満たす第2化合物をともに含む蒸着源から共蒸着することにより膜を形成する。ΔEST(1)は、第1化合物の最低励起一重項エネルギー準位ES1(1)と最低励起三重項エネルギー準位の差であり、ES1(2)は第2化合物の最低励起一重項エネルギー準位である。
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