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1. WO2020111193 - SEMICONDUCTOR DEVICE MANUFACTURING METHOD, LIGHT-ABSORBING LAYERED BODY, AND TEMPORARY-FIXING-USE LAYERED BODY

Publication Number WO/2020/111193
Publication Date 04.06.2020
International Application No. PCT/JP2019/046636
International Filing Date 28.11.2019
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/301 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301to subdivide a semiconductor body into separate parts, e.g. making partitions
CPC
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
Applicants
  • 日立化成株式会社 HITACHI CHEMICAL COMPANY, LTD. [JP]/[JP]
Inventors
  • 西戸 圭祐 NISHIDO Keisuke
  • 宮澤 笑 MIYAZAWA Emi
  • 大山 恭之 OOYAMA Yasuyuki
  • 川守 崇司 KAWAMORI Takashi
  • 赤須 雄太 AKASU Yuta
  • 白坂 敏明 SHIRASAKA Toshiaki
  • 鈴木 直也 SUZUKI Naoya
  • 早坂 剛 HAYASAKA Tsuyoshi
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 清水 義憲 SHIMIZU Yoshinori
  • 平野 裕之 HIRANO Hiroyuki
Priority Data
2018-22345629.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE MANUFACTURING METHOD, LIGHT-ABSORBING LAYERED BODY, AND TEMPORARY-FIXING-USE LAYERED BODY
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR, CORPS STRATIFIÉ ABSORBANT LA LUMIÈRE, ET CORPS STRATIFIÉ À USAGE DE FIXATION TEMPORAIRE
(JA) 半導体装置を製造する方法、光吸収積層体、及び仮固定用積層体
Abstract
(EN)
Disclosed is a semiconductor device manufacturing method comprising, in this order: a step for processing a semiconductor member that has been temporarily fixed to a support member via a temporary fixing material layer; and a step for separating the semiconductor member from the support member by irradiating a temporary-fixing-use layered body with incoherent light from the support member side. All or part of the temporary fixing material layer is a light-absorbing layer which absorbs light and generates heat. The transmittance of the support member with respect to the incoherent light is 90% or greater. The transmittance of the temporary fixing material layer with respect to the incoherent light is 3.1% or less.
(FR)
L'invention concerne un procédé de fabrication de dispositif à semi-conducteur comprenant, dans cet ordre : une étape de traitement d'un élément semi-conducteur qui a été temporairement fixé à un élément de support par l'intermédiaire d'une couche de matériau de fixation temporaire ; et une étape de séparation de l'élément semi-conducteur de l'élément de support par irradiation d'un corps stratifié à usage de fixation temporaire avec une lumière incohérente provenant du côté de l'élément de support. Tout ou une partie de la couche de matériau de fixation temporaire est une couche d'absorption de lumière qui absorbe la lumière et génère de la chaleur. La transmittance de l'élément de support par rapport à la lumière incohérente est de 90 % ou plus. La transmittance de la couche de matériau de fixation temporaire par rapport à la lumière incohérente est de 3,1 % ou moins.
(JA)
支持部材に対して仮固定材層を介して仮固定された半導体部材を加工する工程と、仮固定用積層体に対して支持部材側からインコヒーレント光を照射し、それにより半導体部材を支持部材から分離する工程と、をこの順に備える、半導体装置を製造する方法が開示される。仮固定材層の一部又は全部が、光を吸収して熱を発生する光吸収層である。支持部材のインコヒーレント光に対する透過率が90%以上である。仮固定材層のインコヒーレント光に対する透過率が3.1%以下である。
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