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1. WO2020111146 - SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND LAYERED FILM FOR TEMPORARY FIXING MATERIAL

Publication Number WO/2020/111146
Publication Date 04.06.2020
International Application No. PCT/JP2019/046433
International Filing Date 27.11.2019
IPC
H01L 21/301 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301to subdivide a semiconductor body into separate parts, e.g. making partitions
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
CPC
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
Applicants
  • 日立化成株式会社 HITACHI CHEMICAL COMPANY, LTD. [JP]/[JP]
Inventors
  • 西戸 圭祐 NISHIDO Keisuke
  • 宮澤 笑 MIYAZAWA Emi
  • 大山 恭之 OOYAMA Yasuyuki
  • 川守 崇司 KAWAMORI Takashi
  • 赤須 雄太 AKASU Yuta
  • 白坂 敏明 SHIRASAKA Toshiaki
  • 鈴木 直也 SUZUKI Naoya
  • 早坂 剛 HAYASAKA Tsuyoshi
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 清水 義憲 SHIMIZU Yoshinori
  • 平野 裕之 HIRANO Hiroyuki
Priority Data
2018-22345829.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND LAYERED FILM FOR TEMPORARY FIXING MATERIAL
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR ET FILM STRATIFIÉ POUR MATÉRIAU DE FIXATION TEMPORAIRE
(JA) 半導体装置の製造方法及び仮固定材用積層フィルム
Abstract
(EN)
Disclosed is a semiconductor device manufacturing method comprising: a preparation step for preparing a layered body formed by layering, in the order given, a support member, an insulation layer, a temporary fixing material layer that absorbs light and thereby generates heat, and a semiconductor member; and a separating step for, in the layered body, separating the semiconductor member from the support member by projecting light onto the temporary fixing material layer.
(FR)
L'invention concerne un procédé de fabrication de dispositif à semi-conducteur comprenant : une étape de préparation pour préparer un corps stratifié formé par stratification, dans l'ordre donné, d'un élément de support, d'une couche d'isolation, d'une couche de matériau de fixation temporaire qui absorbe la lumière et génère ainsi de la chaleur, et un élément semi-conducteur ; et une étape de séparation consistant, dans le corps stratifié, à séparer l'élément semi-conducteur de l'élément de support en projetant de la lumière sur la couche de matériau de fixation temporaire.
(JA)
支持部材と、断熱層と、光を吸収して熱を発生する仮固定材層と、半導体部材とがこの順に積層された積層体を準備する準備工程と、積層体における仮固定材層に光を照射して、支持部材から半導体部材を分離する分離工程とを備える、半導体装置の製造方法が開示される。
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