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1. WO2020111100 - SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE

Publication Number WO/2020/111100
Publication Date 04.06.2020
International Application No. PCT/JP2019/046309
International Filing Date 27.11.2019
IPC
H03M 1/56 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
MCODING, DECODING OR CODE CONVERSION, IN GENERAL
1Analogue/digital conversion; Digital/analogue conversion
12Analogue/digital converters
50with intermediate conversion to time interval
56Input signal compared with linear ramp
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/3745 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
CPC
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H03M 1/56
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
MCODING; DECODING; CODE CONVERSION IN GENERAL
1Analogue/digital conversion; Digital/analogue conversion
12Analogue/digital converters
50with intermediate conversion to time interval
56Input signal compared with linear ramp
H04N 5/3745
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 片山 泰志 KATAYAMA Hiroshi
Agents
  • 渡邊 薫 WATANABE Kaoru
Priority Data
2018-22504330.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE
(FR) DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS ET DISPOSITIF ÉLECTRONIQUE
(JA) 固体撮像装置及び電子機器
Abstract
(EN)
Provided are a solid-state imaging device and an electronic device that can achieve a reduction in power consumption. Provided is a solid-state imaging device comprising: a pixel array unit that has a unit pixel; a vertical signal line that is connected to the unit pixel; a first transistor having a source or a drain which is connected to each of a point of a first potential and the vertical signal line; a second transistor having a source or a drain which is connected to each of a point of a second potential and the vertical signal line; a D/A converter; and a comparator that is connected to the vertical signal line and the D/A converter, wherein the first potential is supplied to the vertical signal line by the first transistor, and the first potential is higher than the second potential.
(FR)
L'invention concerne un dispositif d'imagerie à semi-conducteurs et un dispositif électronique qui peuvent réaliser une réduction de la consommation d'énergie. L'invention concerne un dispositif d'imagerie à semi-conducteurs comprenant : une unité de réseau de pixels qui a un pixel unitaire ; une ligne de signal verticale qui est connectée au pixel unitaire ; un premier transistor ayant une source ou un drain qui est connecté à chacun d'un point d'un premier potentiel et de la ligne de signal verticale ; un second transistor ayant une source ou un drain qui est connecté à chacun d'un point d'un second potentiel et de la ligne de signal verticale ; un convertisseur N/A ; et un comparateur qui est connecté à la ligne de signal verticale et au convertisseur N/A, le premier potentiel étant fourni à la ligne de signal verticale par le premier transistor, et le premier potentiel étant supérieur au second potentiel.
(JA)
消費電力の低減を図ることができる、固体撮像装置及び電子機器を提供する。 単位画素を有する画素アレイ部と、前記単位画素に接続された垂直信号線と、第1の電位の地点と前記垂直信号線のそれぞれに、ソースまたはドレインが接続された第1のトランジスタと、第2の電位の地点と前記垂直信号線のそれぞれに、ソースまたはドレインが接続された第2のトランジスタと、D/A変換部と、前記垂直信号線と前記D/A変換部とに接続されたコンパレータと、を備え、前記垂直信号線には、前記第1のトランジスタにより前記第1の電位が供給され、前記第1の電位が、前記第2の電位よりも高い、固体撮像装置を提供する。
Also published as
Latest bibliographic data on file with the International Bureau