Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020111086 - (METH)ACRYLIC COMPOUND AND PHOTOSENSITIVE INSULATION FILM COMPOSITION

Publication Number WO/2020/111086
Publication Date 04.06.2020
International Application No. PCT/JP2019/046257
International Filing Date 27.11.2019
IPC
C08F 20/34 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
20Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10Esters
34Esters containing nitrogen
C08F 290/14 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
290Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
08on to polymers modified by introduction of unsaturated side groups
14Polymers provided for in subclass C08G52
C08G 73/10 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
73Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen or carbon, not provided for in groups C08G12/-C08G71/238
06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule; Polyhydrazides; Polyamide acids or similar polyimide precursors
10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
G03F 7/027 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
G03F 7/037 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
032with binders
037the binders being polyamides or polyimides
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
C08F 20/34
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
20Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
10Esters
34Esters containing nitrogen ; , e.g. N,N-dimethylaminoethyl (meth)acrylate
C08F 290/14
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
290Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
08on to polymers modified by introduction of unsaturated side groups
14Polymers provided for in subclass C08G
C08G 73/10
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
73Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
G03F 7/027
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
G03F 7/037
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
032with binders
037the binders being polyamides or polyimides
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
Applicants
  • 日産化学株式会社 NISSAN CHEMICAL CORPORATION [JP]/[JP]
Inventors
  • 服部 隼人 HATTORI Hayato
  • 遠藤 雅久 ENDO Masahisa
  • 平佐田 一樹 HIRASADA Kazuki
Agents
  • 特許業務法人 津国 TSUKUNI & ASSOCIATES
  • 山村 大介 YAMAMURA Daisuke
Priority Data
2018-22342429.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) (METH)ACRYLIC COMPOUND AND PHOTOSENSITIVE INSULATION FILM COMPOSITION
(FR) COMPOSÉ (MÉTH)ACRYLIQUE ET COMPOSITION DE FILM D'ISOLATION PHOTOSENSIBLE
(JA) (メタ)アクリル化合物および感光性絶縁膜組成物
Abstract
(EN)
The invention provides a photosensitive resin composition yielding a cured body having low permittivity and low dielectric tangent, a method using the photosensitive resin composition for producing a base board equipped with a cured relief pattern, and a semiconductor device equipped with the cured relief pattern. The photosensitive resin composition contains (A) a resin and (B) a (meth)acrylic compound represented by formula [1a] (In formula [1a], R11 represents an alkyl group having 2 to 30 carbon atoms, each R21 represents independently a hydrogen atom or a methyl group, L1 represents a single bond or an oxymethylene group, L2 represents an organic group represented by formula [2a] or formula [3a], and n represents an integer from 1 to 6.) (In formula [2a], * represents a terminal bonded to the carbonyl group, L3 and L4 each independently represent an alkylene group having 2 to 8 carbon atoms and optionally containing an ether bond.) (In formula [3a], * represents a terminal bonded to the carbonyl group, L5 represents a hydrocarbon group of valence (n+1) having 2 to 10 carbon atoms and optionally containing an ether bond.) and/or (B) a (meth)acrylic compound represented by formula [1a1] (In formula [1a1], R12 represents an alkyl group having 2 to 30 carbon atoms, each R22 represents independently a hydrogen atom or a methyl group, and n represents an integer from 1 to 6.)
(FR)
L'invention concerne une composition de résine photosensible permettant d'obtenir un corps durci présentant une faible permittivité et une faible tangente diélectrique, un procédé utilisant la composition de résine photosensible pour produire une plaque de base pourvue d'un motif en relief durci, et un dispositif à semi-conducteur pourvu du motif en relief durci. La composition de résine photosensible contient (A) une résine et (B) un composé (méth)acrylique représenté par la formule [1a] (Dans la formule [1a], R11 représente un groupe alkyle présentant 2 à 30 atomes de carbone, chaque R21 représente indépendamment un atome d'hydrogène ou un groupe méthyle, L1 représente une liaison simple ou un groupe oxyméthylène, L2 représente un groupe organique représenté par la formule [2a] ou la formule [3a], et n représente un nombre entier de 1 à 6.) (Dans la formule [2a], * représente un terminal lié au groupe carbonyle, L3 et L4 représentent chacun indépendamment un groupe alkylène présentant de 2 à 8 atomes de carbone et contenant éventuellement une liaison éther.) (Dans la formule [3a], * représente un terminal lié au groupe carbonyle, L5 représente un groupe hydrocarboné de valence (n +1) présentant 2 à 10 atomes de carbone et contenant éventuellement une liaison éther.) et/ou (B) un composé (méth)acrylique représenté par la formule [1a1] (Dans la formule [1a1], R12 représente un groupe alkyle présentant 2 à 30 atomes de carbone, chaque R22 représente indépendamment un atome d'hydrogène ou un groupe méthyle, et n représente un nombre entier de 1 à 6.).
(JA)
低誘電率かつ低誘電正接の硬化体を与える感光性樹脂組成物、該感光性樹脂組成物を用いて硬化レリーフパターン付き基板を製造する方法、及び該硬化レリーフパターンを備える半導体装置を提供する。 (A)樹脂、及び(B)下記式[1a]: (式[1a]中、R11は炭素原子数2乃至30のアルキル基を表し、R21はそれぞれ独立に水素原子又はメチル基を表し、Lは単結合又はオキシメチレン基を表し、Lは式[2a]又は式[3a]で表される有機基を表し、nは1~6の整数を表す。) (式[2a]中、*はカルボニル基に結合する端を示し、L、Lはそれぞれ独立して、エーテル結合を含んでいてもよい炭素原子数2乃至8のアルキレン基を表す。) (式[3a]中、*はカルボニル基に結合する端を示し、Lはエーテル結合を含んでいてもよい炭素原子数2乃至10の(n+1)価の炭化水素基を表す。)で表される(メタ)アクリル化合物、及び/又は (B)下記式[1a1]: (式[1a1]中、R12は炭素原子数2乃至30のアルキル基を表し、R22はそれぞれ独立に水素原子又はメチル基を表し、nは1~6の整数を表す。) で表される(メタ)アクリル化合物 を含む感光性樹脂組成物。
Latest bibliographic data on file with the International Bureau