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1. WO2020110964 - GAS NOZZLE, METHOD FOR PRODUCING GAS NOZZLE, AND PLASMA TREATMENT DEVICE

Publication Number WO/2020/110964
Publication Date 04.06.2020
International Application No. PCT/JP2019/045873
International Filing Date 22.11.2019
IPC
B24B 31/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
31Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work or the abrasive material is loose; Accessories therefor
C04B 35/50 2006.01
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
50based on rare earth compounds
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
B05B 15/18 2018.01
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
15Details of spraying plant or spraying apparatus not otherwise provided for; Accessories
14Arrangements for preventing or controlling structural damage to spraying apparatus or its outlets, e.g. for breaking at desired places; Arrangements for handling or replacing damaged parts
18for improving resistance to wear, e.g. inserts or coatings; for indicating wear; for handling or replacing worn parts
CPC
B05B 15/18
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
15Details of spraying plant or spraying apparatus not otherwise provided for; Accessories
14Arrangements for preventing or controlling structural damage to spraying apparatus or its outlets, e.g. for breaking at desired places; Arrangements for handling or replacing damaged parts
18for improving resistance to wear, e.g. inserts or coatings; for indicating wear; for handling or replacing worn parts
B24B 31/00
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
31Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor
C04B 35/50
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
35Shaped ceramic products characterised by their composition
50based on rare-earth compounds
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
Applicants
  • 京セラ株式会社 KYOCERA CORPORATION [JP]/[JP]
Inventors
  • 野口 幸雄 NOGUCHI, Yukio
  • 左橋 知也 SAHASHI, Tomoya
Agents
  • 特許業務法人ブナ国際特許事務所 BUNA PATENT ATTORNEYS
Priority Data
2018-22055926.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) GAS NOZZLE, METHOD FOR PRODUCING GAS NOZZLE, AND PLASMA TREATMENT DEVICE
(FR) BUSE À GAZ, PROCÉDÉ DE PRODUCTION D'UNE BUSE À GAZ ET DISPOSITIF DE TRAITEMENT AU PLASMA
(JA) ガスノズルおよびガスノズルの製造方法ならびにプラズマ処理装置
Abstract
(EN)
A gas nozzle of the present disclosure comprises a tube-shaped feed hole for guiding a gas and a spray hole connected to the feed hole. The gas nozzle is for spraying the gas from the spray hole and is formed from a single crystal or a ceramic whose primary component is: a rare earth element oxide; fluoride or acid fluoride; or an yttrium aluminum compound oxide. The arithmetic mean roughness Ra of the inner circumferential surface forming the feed hole is smaller on the gas outflow side than on the inflow side.
(FR)
Une buse à gaz selon la présente invention comprend un trou d'alimentation en forme de tube pour guider un gaz et un trou de vaporisation relié au trou d'alimentation. La buse à gaz est destinée à vaporiser le gaz à partir du trou de vaporisation et est formée à partir d'un monocristal ou une céramique dont le composant principal est: un oxyde d'élément des terres rares; du fluorure ou du fluorure acide; ou un oxyde de composé d'yttrium-aluminium. La rugosité moyenne arithmétique Ra de la surface circonférentielle interne formant le trou d'alimentation est plus petite sur le côté de sortie de gaz que sur le côté d'entrée.
(JA)
本開示のガスノズルは、ガスを案内する管状の供給孔と、該供給孔に接続する噴射孔とを備え、該噴射孔より前記ガスを噴射する、希土類元素の酸化物、フッ化物もしくは酸フッ化物またはイットリウムアルミニウム複合酸化物を主成分とするセラミックスまたは単結晶からなるガスノズルであって、前記供給孔を形成する内周面の算術平均粗さRaは、前記ガスの流入側より流出側の方が小さい。
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