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1. WO2020110954 - CERAMIC STRUCTURE AND STRUCTURE WITH TERMINAL

Publication Number WO/2020/110954
Publication Date 04.06.2020
International Application No. PCT/JP2019/045835
International Filing Date 22.11.2019
IPC
C04B 37/02 2006.01
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
37Joining burned ceramic articles with other burned ceramic articles or other articles by heating
02with metallic articles
H05B 3/02 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
02Details
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
CPC
C04B 37/02
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
37Joining burned ceramic articles with other burned ceramic articles or other articles by heating
02with metallic articles
H01L 21/683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
H05B 3/02
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
02Details
Applicants
  • 京セラ株式会社 KYOCERA CORPORATION [JP]/[JP]
Inventors
  • 和多田 一雄 WATADA, Kazuo
  • 松岡 亨 MATSUOKA, Tooru
Agents
  • 飯島 康弘 IIJIMA, YASUHIRO
Priority Data
2018-22467630.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CERAMIC STRUCTURE AND STRUCTURE WITH TERMINAL
(FR) STRUCTURE CÉRAMIQUE ET STRUCTURE DOTÉE D'UN TERMINAL
(JA) セラミック構造体及び端子付構造体
Abstract
(EN)
The present invention provides a heater that includes a substrate, a terminal, and a bonding layer. The substrate comprises ceramics. The bonding layer mainly comprises metal and is positioned between the substrate and the terminal. The substrate has a first surface and a second surface. The first surface faces the outside of the substrate and includes at least one of a region overlapping the terminal and a region positioned around the terminal. The second surface intersects the first surface and is positioned more inward of the substrate the further away from the first surface. The bonding layer extends from the terminal and the first surface to the second surface.
(FR)
La présente invention concerne un dispositif de chauffage qui comprend un substrat, un terminal, et une couche de liaison. Le substrat comprend des éléments céramiques. La couche de liaison comprend principalement du métal et est positionnée entre le substrat et le terminal. Le substrat présente une première surface et une seconde surface. La première surface fait face à l'extérieur du substrat et comprend au moins l'une d'une région chevauchant le terminal et d'une région positionnée autour du terminal. La seconde surface coupe la première surface et est positionnée davantage vers l'intérieur du substrat plus loin de la première surface. La couche de liaison s'étend depuis le terminal et la première surface vers la seconde surface.
(JA)
ヒータは、基体、端子及び接合層を有している。基体は、セラミックからなる。接合層は、金属が主成分であり、基体と端子との間に位置する。基体は、第1面及び第2面を有している。第1面は、基体の外側へ面しており、端子と重なっている領域及び端子の周囲に位置している領域の少なくとも一方を含んでいる。第2面は、第1面に交差しており、第1面から離れるほど基体の内部側へ位置している。接合層は、端子及び第1面から第2面に至っている。
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