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1. WO2020110858 - SUBSTRATE WASHING METHOD, PROCESSING VESSEL WASHING METHOD, AND SUBSTRATE PROCESSING DEVICE

Publication Number WO/2020/110858
Publication Date 04.06.2020
International Application No. PCT/JP2019/045418
International Filing Date 20.11.2019
IPC
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 池田 恭子 IKEDA, Kyoko
  • 土橋 和也 DOBASHI, Kazuya
  • 中島 常長 NAKASHIMA, Tsunenaga
  • 関口 賢治 SEKIGUCHI, Kenji
  • 錦戸 修一 NISHIKIDO, Shuuichi
  • 中城 将人 NAKAJO, Masato
  • 安武 孝洋 YASUTAKE, Takahiro
Agents
  • 伊東 忠重 ITOH, Tadashige
  • 伊東 忠彦 ITOH, Tadahiko
Priority Data
2018-22566930.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE WASHING METHOD, PROCESSING VESSEL WASHING METHOD, AND SUBSTRATE PROCESSING DEVICE
(FR) PROCÉDÉ DE LAVAGE DE SUBSTRAT, PROCÉDÉ DE LAVAGE DE CUVE DE TRAITEMENT, ET DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板洗浄方法、処理容器洗浄方法、および基板処理装置
Abstract
(EN)
Provided is a substrate washing method comprising: a step for arranging a substrate in a processing vessel; a step for injecting a gas from an injection port of a gas nozzle arranged in the processing vessel; a step for causing normal shock waves generated by the injection of gas from the gas nozzle to hit a main surface of the substrate; and a step for removing particles attached to the main surface of the substrate by causing the normal shock waves to hit the main surface of the substrate.
(FR)
L'invention concerne un procédé de lavage de substrat comprenant : une étape consistant à agencer un substrat dans une cuve de traitement ; une étape consistant à injecter un gaz à partir d'un orifice d'injection d'une buse à gaz disposée dans la cuve de traitement ; une étape consistant à amener des ondes de choc normales générées par l'injection de gaz à partir de la buse à gaz à toucher une surface principale du substrat ; et une étape consistant à éliminer des particules fixées à la surface principale du substrat en amenant les ondes de choc normales à toucher la surface principale du substrat.
(JA)
処理容器の内部に基板を配置する工程と、前記処理容器の内部に配置されたガスノズルの噴射口からガスを噴射する工程と、前記ガスノズルからのガスの噴射によって発生した垂直衝撃波を、前記基板の主表面に衝突させる工程と、前記垂直衝撃波を前記基板の前記主表面に衝突させることにより、前記基板の前記主表面に付着したパーティクルを除去する工程とを有する、基板洗浄方法。
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