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1. WO2020110850 - CERAMIC STRUCTURE AND METHOD OF MANUFACTURING CERAMIC STRUCTURE

Publication Number WO/2020/110850
Publication Date 04.06.2020
International Application No. PCT/JP2019/045380
International Filing Date 20.11.2019
IPC
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
B28B 11/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
28WORKING CEMENT, CLAY, OR STONE
BSHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG OR MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
11Apparatus or processes for treating or working the shaped articles
H05B 3/02 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
02Details
H05B 3/74 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
68Heating arrangements specially adapted for cooking plates or analogous hot-plates
74Non-metallic plates
CPC
B28B 11/00
BPERFORMING OPERATIONS; TRANSPORTING
28WORKING CEMENT, CLAY, OR STONE
BSHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG, OR MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
11Apparatus or processes for treating or working the shaped ; or preshaped; articles
H01L 21/683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
H05B 3/02
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
02Details
H05B 3/74
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
68Heating arrangements specially adapted for cooking plates or analogous hot-plates
74Non-metallic plates ; , e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
Applicants
  • 京セラ株式会社 KYOCERA CORPORATION [JP]/[JP]
Inventors
  • 川邊 保典 KAWANABE, Yasunori
  • 石峯 裕作 ISHIMINE, Yuusaku
  • 宗石 猛 MUNEISHI, Takeshi
  • 大川 善裕 OKAWA, Yoshihiro
Agents
  • 飯島 康弘 IIJIMA, YASUHIRO
Priority Data
2018-22468030.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CERAMIC STRUCTURE AND METHOD OF MANUFACTURING CERAMIC STRUCTURE
(FR) STRUCTURE EN CÉRAMIQUE ET PROCÉDÉ DE FABRICATION DE STRUCTURE EN CÉRAMIQUE
(JA) セラミック構造体及びセラミック構造体の製造方法
Abstract
(EN)
A heater according to the present invention comprises a substrate and an internal conductor. The substrate is composed of ceramic. The internal conductor is positioned in the substrate and has a connection portion. The substrate has a space extending from the connection portion to a lower surface of the substrate. The space includes a first space and a second space. The first space adjoins the connection portion. The second space provides communication between the first space and the outside of the lower surface of the substrate, and is smaller than the first space when viewed in plan through the lower surface of the substrate.
(FR)
Un dispositif de chauffage selon la présente invention comprend un substrat et un conducteur interne. Le substrat est composé de céramique. Le conducteur interne est positionné dans le substrat et a une partie de connexion. Le substrat a un espace s'étendant de la partie de connexion à une surface inférieure du substrat. L'espace comprend un premier espace et un second espace. Le premier espace est contigu à la partie de connexion. Le second espace fournit une communication entre le premier espace et l'extérieur de la surface inférieure du substrat, et est plus petit que le premier espace lorsqu'il est observé dans un plan à travers la surface inférieure du substrat.
(JA)
ヒータは、基体と、内部導体とを有している。基体は、セラミックからなる。内部導体は、基体内に位置しており、接続部を有している。基体は、接続部から当該基体の下面に亘っている空間を有している。空間は、第1空間及び第2空間を有している。第1空間は、接続部に接している。第2空間は、第1空間と基体の下面の外側とを連通しており、基体の下面の平面透視において第1空間よりも小さい。
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