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1. WO2020110839 - METHOD FOR PRODUCING ERBIUM-DOPED BISMUTH OXIDE FILM

Publication Number WO/2020/110839
Publication Date 04.06.2020
International Application No. PCT/JP2019/045317
International Filing Date 19.11.2019
IPC
C23C 14/08 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C23C 14/58 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
58After-treatment
H01S 3/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
14characterised by the material used as the active medium
16Solid materials
CPC
C23C 14/08
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C23C 14/58
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
58After-treatment
H01S 3/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
14characterised by the material used as the active medium
16Solid materials
H01S 3/17
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
14characterised by the material used as the active medium
16Solid materials
17amorphous, e.g. glass
Applicants
  • 日本電信電話株式会社 NIPPON TELEGRAPH AND TELEPHONE CORPORATION [JP]/[JP]
Inventors
  • 赤澤 方省 AKAZAWA Hosei
Agents
  • 特許業務法人 谷・阿部特許事務所 TANI & ABE, P.C.
Priority Data
2018-22261628.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING ERBIUM-DOPED BISMUTH OXIDE FILM
(FR) PROCÉDÉ DE FABRICATION D'UNE FEUILLE D'OXYDE DE BISMUTH DOPÉ À L'ERBIUM
(JA) エルビウムドープビスマス酸化物膜の製造方法
Abstract
(EN)
An erbium-doped bismuth oxide which can exert the emission of highly intense light from an Er3+ ion is produced. Provided is a method for producing an erbium-doped bismuth oxide film, comprising the steps of: placing a first sputtering target containing a bismuth oxide, a second sputtering target containing an erbium oxide (Er2O3) and a substrate away from one another in a closed film formation chamber; setting the temperature of the substrate to room temperature, and then introducing a H2O gas into the film formation chamber at a specified pressure to feed the H2O gas in the vicinity of the substrate; sputtering the first sputtering target and the second sputtering target simultaneously so that a portion of the first sputtering target and a portion of the second sputtering target are deposited on the substrate, thereby forming a precursor film; and heating the precursor film at a specified temperature, thereby forming a crystal film.
(FR)
La présente invention vise à fabriquer un oxyde de bismuth dopé à l'erbium, lequel peut exercer l'émission d'une lumière hautement intense à partir d'un ion Er3+. L'invention concerne un procédé de fabrication d'une feuille d'oxyde de bismuth dopé à l'erbium, comprenant les étapes consistant : à placer une première cible de pulvérisation contenant un oxyde de bismuth, une seconde cible de pulvérisation contenant un oxyde d'erbium (Er2O3) et un substrat à distance l'un de l'autre dans une chambre de formation de feuille fermée ; à régler la température du substrat à la température ambiante, puis, à introduire un gaz (H2O) dans la chambre de formation de feuille à une pression spécifiée pour alimenter le gaz (H2O) à proximité du substrat ; à pulvériser la première cible de pulvérisation et la seconde cible de pulvérisation simultanément de telle sorte qu'une partie de la première cible de pulvérisation et une partie de la seconde cible de pulvérisation sont déposées sur le substrat, ce qui permet de former une feuille précurseuse ; et à chauffer la feuille précurseuse à une température spécifiée, ce qui permet de former une feuille cristalline.
(JA)
高強度なEr3+イオンからの発光を示すエルビウムドープビスマス酸化物を製造する。密閉されている成膜室の中に、ビスマス酸化物を含む第1のスパッタリングターゲットと、エルビウム酸化物(Er23)を含む第2のスパッタリングターゲットと、基板とを、成膜室の中でそれぞれ離して配置する工程と、基板の温度を室温に設定し、H2Oガスを成膜室の中に所定の圧力で導入し、基板の近傍にH2Oガスを供給する工程と、第1のスパッタリングターゲットと第2のスパッタリングターゲットとをそれぞれ同時にスパッタし、基板上へ第1のスパッタリングターゲットの一部と第2のスパッタリングターゲットの一部とを堆積させて前駆体膜を形成する工程と、前駆体膜を所定の温度で加熱して結晶膜を形成する工程とを備えるエルビウムドープビスマス酸化物膜の製造方法を提供する。
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