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1. WO2020110783 - SEMICONDUCTOR LASER DEVICE

Publication Number WO/2020/110783
Publication Date 04.06.2020
International Application No. PCT/JP2019/044934
International Filing Date 15.11.2019
IPC
H01S 5/022 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
H01S 5/042 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping
042Electrical excitation
H01S 5/22 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave
22having a ridge or a stripe structure
CPC
H01S 5/022
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
H01S 5/042
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping, ; e.g. by electron beams
042Electrical excitation ; ; Circuits therefor
H01S 5/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
22having a ridge or stripe structure
Applicants
  • パナソニックセミコンダクターソリューションズ株式会社 PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD. [JP]/[JP]
Inventors
  • 口野 啓史 KOUNO, Keishi
  • 廣山 良治 HIROYAMA, Ryoji
  • 吉田 真治 YOSHIDA, Shinji
  • 左文字 克哉 SAMONJI, Katsuya
Agents
  • 新居 広守 NII, Hiromori
  • 寺谷 英作 TERATANI, Eisaku
  • 道坂 伸一 MICHISAKA, Shinichi
Priority Data
2018-22566130.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR LASER DEVICE
(FR) DISPOSITIF LASER À SEMI-CONDUCTEUR
(JA) 半導体レーザ装置
Abstract
(EN)
This semiconductor laser device (10) comprises: a semiconductor laminate (30); and a first opening part (27) formed to extend along a first direction from a front end surface (36) to a rear end surface (37) and also comprises: an insulation layer (21) disposed above the semiconductor laminate (30); a first electrode (25) disposed above the semiconductor laminate (30); a second electrode disposed above the first electrode (25) and the insulation layer (21); and an auxiliary adhesion layer (22) disposed between the second electrode (23) and the insulation layer (21), wherein the auxiliary adhesion layer (22) has a second opening part (26) that at least partially overlaps the first opening part (27) in a plan view, at least a portion of the first electrode (25) is disposed inside the first opening part (27) and the second opening part (26), and the second electrode (23) and the auxiliary adhesion layer (22) are located above the insulation layer (21) between at least one end surface among the front end surface (36) and the rear end surface (37) and the first opening part (27).
(FR)
L'invention concerne un dispositif laser à semi-conducteur (10) comprenant : un stratifié semi-conducteur (30) ; et une première partie d'ouverture (27) formée pour s'étendre le long d'une première direction depuis une surface d'extrémité avant (36) jusqu'à une surface d'extrémité arrière (37) et comprend également : une couche d'isolation (21) disposée au-dessus du stratifié semi-conducteur (30) ; une première électrode (25) disposée au-dessus du stratifié semi-conducteur (30) ; une seconde électrode disposée au-dessus de la première électrode (25) et de la couche d'isolation (21) ; et une couche d'adhérence auxiliaire (22) disposée entre la seconde électrode (23) et la couche d'isolation (21), la couche d'adhérence auxiliaire (22) ayant une seconde partie d'ouverture (26) qui chevauche au moins partiellement la première partie d'ouverture (27) dans une vue en plan, au moins une partie de la première électrode (25) étant disposée à l'intérieur de la première partie d'ouverture (27) et la seconde partie d'ouverture (26), et la seconde électrode (23) et la couche d'adhérence auxiliaire (22) sont situées au-dessus de la couche d'isolation (21) entre au moins une surface d'extrémité parmi la surface d'extrémité avant (36) et la surface d'extrémité arrière (37) et la première partie d'ouverture (27).
(JA)
半導体レーザ装置(10)は、半導体積層体(30)と、前端面(36)から後端面(37)へ向かう第一方向に沿って延びるように形成された第一開口部(27)を備え、かつ、半導体積層体(30)の上方に配置された絶縁層(21)と、半導体積層体(30)の上方に配置された第一電極(25)と、第一電極(25)及び絶縁層(21)の上方に配置された第二電極(23)と、第二電極(23)と絶縁層(21)との間に配置された密着補助層(22)とを備え、密着補助層(22)は、平面視において、少なくとも一部が第一開口部(27)と重なる第二開口部(26)を有し、第一電極(25)の少なくとも一部は、第一開口部(27)及び第二開口部(26)の内側に配置され、第二電極(23)と密着補助層(22)とは、前端面(36)及び後端面(37)の少なくとも一方の端面と第一開口部(27)との間であって、絶縁層(21)の上方に配置される。
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