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1. WO2020110736 - GAS SUPPLY APPARATUS AND GAS SUPPLY METHOD

Publication Number WO/2020/110736
Publication Date 04.06.2020
International Application No. PCT/JP2019/044579
International Filing Date 13.11.2019
IPC
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/511 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
50using electric discharges
511using microwave discharges
CPC
C23C 16/455
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
C23C 16/511
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
511using microwave discharges
H01L 21/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
H05H 1/46
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 林 裕之 HAYASHI, Hiroyuki
  • 太田 龍作 OTA, Ryosaku
Agents
  • 特許業務法人弥生特許事務所 YAYOY PATENT OFFICE
Priority Data
2018-22147027.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) GAS SUPPLY APPARATUS AND GAS SUPPLY METHOD
(FR) APPAREIL D'ALIMENTATION EN GAZ ET PROCÉDÉ D'ALIMENTATION EN GAZ
(JA) ガス供給装置及びガス供給方法
Abstract
(EN)
[Problem] To prevent, via a simple configuration, gas leaks from a gas supply path when branching the downstream side of the gas supply path and supplying gas to a treatment vessel. [Solution] A gas supply apparatus according to the present invention comprises: a venting mechanism for venting the interior of a treatment vessel to form a vacuum environment; a gas supply path comprising an upstream flow path to which gas is supplied from a gas supply source, and a plurality of branch paths formed by branching the downstream side of the upstream flow path into a plurality of paths, each of the branch paths being connected to the treatment vessel; first valves which are provided to each of the branch paths in order to divert, to the various branch paths, gas supplied from a gas supply mechanism to the upstream flow path, the aperture of the valves being variable and the valves not closing completely; a second valve, provided to the upstream flow path, for supplying and cutting off gas to the downstream side; a pressure sensor for detecting the pressure within the treatment vessel; and an anomaly detector for detecting anomalies in the gas supply path downstream of the second valve on the basis of the detected pressure within the treatment vessel.
(FR)
Le problème décrit par la présente invention est d'empêcher, par l'intermédiaire d'une configuration simple, des fuites de gaz d'un trajet d'alimentation en gaz lors du branchement du côté aval du trajet d'alimentation en gaz et de fournir du gaz à un récipient de traitement. La solution selon la présente invention porte sur un appareil d'alimentation en gaz qui comprend un mécanisme de ventilation pour ventiler l'intérieur d'un récipient de traitement pour former un environnement sous vide ; un trajet d'alimentation en gaz comprenant un trajet d'écoulement en amont auquel un gaz est fourni par une source d'alimentation en gaz et une pluralité de trajets de ramification formés par branchement du côté aval du trajet d'écoulement en amont en une pluralité de trajets, chacun des trajets de ramification étant relié au récipient de traitement ; des premières soupapes disposées sur chacun des trajets de ramification afin de dévier, aux divers chemins de ramification, du gaz fourni par un mécanisme d'alimentation en gaz au trajet d'écoulement en amont, l'ouverture des soupapes étant variable et les soupapes ne se fermant pas complètement ; une seconde soupape, disposée sur le trajet d'écoulement en amont, pour fournir et couper un gaz vers le côté en aval ; un capteur de pression pour détecter la pression à l'intérieur du récipient de traitement ; et un détecteur d'anomalie pour détecter des anomalies dans le trajet d'alimentation en gaz en aval de la seconde soupape sur la base de la pression détectée à l'intérieur du récipient de traitement.
(JA)
【課題】ガス供給路の下流側を分岐させて処理容器にガスを供給するにあたり、簡素な構成でガス供給路からのガスの漏洩を防ぐこと。 【解決手段】処理容器内を排気して真空雰囲気を形成する排気機構と、ガス供給源からガスが供給される上流側流路と、上流側流路の下流側が複数に分岐して形成されると共に処理容器に各々接続される複数の分岐路と、を備えるガス供給路と、ガス供給機構から上流側流路に供給されたガスを各分岐路へ分流するために当該分岐路に各々設けられた、開度を変更自在で全閉されない第1のバルブと、上流側流路に設けられ、下流側へガスを給断する第2のバルブと、処理容器内の圧力を検出するための圧力センサと、検出された処理容器内の圧力に基づいて、ガス供給路における第2のバルブの下流側の異常を検出する異常検出部と、を備えるガス供給装置を構成する。
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