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1. WO2020110719 - NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING SAME

Publication Number WO/2020/110719
Publication Date 04.06.2020
International Application No. PCT/JP2019/044457
International Filing Date 13.11.2019
IPC
H01L 33/32 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01S 5/022 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
H01S 5/343 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
343in AIIIBV compounds, e.g. AlGaAs-laser
CPC
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01S 5/022
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
H01S 5/343
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
343in AIIIBV compounds, e.g. AlGaAs-laser ; , InP-based laser
Applicants
  • パナソニックセミコンダクターソリューションズ株式会社 PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD. [JP]/[JP]
Inventors
  • 井上 昇 INOUE, Noboru
  • 吉田 真治 YOSHIDA, Shinji
Agents
  • 新居 広守 NII, Hiromori
  • 寺谷 英作 TERATANI, Eisaku
  • 道坂 伸一 MICHISAKA, Shinichi
Priority Data
2018-22348329.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING SAME
(FR) ÉLÉMENT ÉLECTROLUMINESCENT SEMI-CONDUCTEUR AU NITRURE ET PROCÉDÉ DE PRODUCTION DE CELUI-CI
(JA) 窒化物系半導体発光素子及びその製造方法
Abstract
(EN)
Provided is a nitride semiconductor light-emitting element comprising a substrate (10) that is an example of an n-type nitride semiconductor containing a group IV n-type impurity, and an n-side electrode (34) in contact with the substrate (10). The substrate (10) has a halogen element-containing surface layer region (10a) in contact with the n-side electrode (34) and an internal region (10b) disposed on the side of the surface layer region (10a) opposite from the n-side electrode (34). The peak concentration of the group IV n-type impurity in the surface layer region (10a) is at least 1.0×1021 cm-3; the peak concentration of the halogen element in the surface layer region (10a) is at least 10% of the peak concentration of the group IV n-type impurity in the surface layer region (10a); and the concentration of the group IV n-type impurity in the internal region (10b) is lower than the concentration of the group IV n-type impurity in the surface layer region (10a).
(FR)
L'invention concerne un élément électroluminescent à semi-conducteur au nitrure comprenant un substrat (10) qui est un exemple d'un semi-conducteur au nitrure de type n contenant une impureté de type n du groupe IV, et une électrode côté n (34) en contact avec le substrat (10). Le substrat (10) a une région de couche de surface contenant un élément halogéné (10a) en contact avec l'électrode côté n (34) et une région interne (10b) disposée sur le côté de la région de couche de surface (10a) opposée à l'électrode côté n (34). La concentration de pic de l'impureté de type n du groupe IV dans la région de couche de surface (10a) est d'au moins 1,0×1021 cm-3; la concentration de pic de l'élément halogéné dans la région de surface (10a) représente au moins 10 % de la concentration de pic de l'impureté de type n du groupe IV dans la région de couche de surface (10a); et la concentration de l'impureté de type n du groupe IV dans la région interne (10b) est inférieure à la concentration de l'impureté de type n du groupe IV dans la région de couche de surface (10a).
(JA)
窒化物系半導体発光素子は、IV族n型不純物を含むn型窒化物系半導体の一例である基板(10)と、基板(10)に接するn側電極(34)とを備え、基板(10)は、n側電極(34)に接し、ハロゲン元素を含む表層領域(10a)と、表層領域(10a)の、n側電極(34)の反対側に位置する内部領域(10b)とを有し、表層領域(10a)におけるIV族n型不純物のピーク濃度は、1.0×1021cm-3以上であり、表層領域(10a)におけるハロゲン元素のピーク濃度は、表層領域(10a)におけるIV族n型不純物のピーク濃度の10%以上であり、内部領域(10b)におけるIV族n型不純物の濃度は、表層領域(10a)におけるIV族n型不純物の濃度より低い。
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