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1. WO2020110709 - SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

Publication Number WO/2020/110709
Publication Date 04.06.2020
International Application No. PCT/JP2019/044369
International Filing Date 12.11.2019
IPC
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
G03F 7/42 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
42Stripping or agents therefor
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
CPC
G03F 7/42
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
42Stripping or agents therefor
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
H01L 21/306
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
Applicants
  • 株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP]/[JP]
Inventors
  • 遠藤 亨 ENDO, Toru
  • 林 昌之 HAYASHI, Masayuki
  • 柴山 宣之 SHIBAYAMA, Nobuyuki
Agents
  • 特許業務法人あい特許事務所 AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS
Priority Data
2018-22163927.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置および基板処理方法
Abstract
(EN)
This substrate processing device processes a substrate using a SPM which is a liquid mixture of sulfuric acid and a hydrogen peroxide solution, the substrate processing device comprising: a substrate holding unit that holds a substrate; recovery piping into which flows a fluid that is supplied to the substrate held by the substrate holding unit and discharged from the substrate; a sulfuric acid-containing liquid producing device to which the fluid having flowed into the recovery piping is delivered for producing a high-temperature first sulfuric acid-containing liquid that contains sulfuric acid on the basis of the fluid; a front surface supply unit for supplying a SPM produced on the basis of the high-temperature first sulfuric acid-containing liquid produced by the sulfuric acid-containing liquid producing device to the front surface of the substrate held by the substrate holding unit; and a rear surface supply unit for supplying a second sulfuric acid-containing liquid that includes the high-temperature first sulfuric acid-containing liquid produced by the sulfuric acid-containing liquid producing device to the rear surface of the substrate held by the substrate holding unit.
(FR)
La présente invention concerne un dispositif de traitement de substrat traitant un substrat à l'aide d'un SPM qui est un mélange liquide d'acide sulfurique et d'une solution de peroxyde d'hydrogène, le dispositif de traitement de substrat comprenant : une unité de maintien de substrat qui maintient un substrat ; une tuyauterie de récupération dans laquelle s'écoule un fluide qui est fourni au substrat maintenu par l'unité de maintien de substrat et évacué du substrat ; un dispositif de production de liquide contenant de l'acide sulfurique auquel le fluide ayant circulé dans la tuyauterie de récupération est délivré pour produire un premier liquide contenant de l'acide sulfurique à haute température qui contient de l'acide sulfurique sur la base du fluide ; une unité d'alimentation en surface avant pour fournir un SPM produit sur la base du premier liquide contenant de l'acide sulfurique à haute température produit par le dispositif de production de liquide contenant de l'acide sulfurique à la surface avant du substrat maintenu par l'unité de maintien de substrat ; et une unité d'alimentation en surface arrière pour fournir un second liquide contenant de l'acide sulfurique qui comprend le premier liquide contenant de l'acide sulfurique à haute température produit par le dispositif de production de liquide contenant de l'acide sulfurique à la surface arrière du substrat maintenu par l'unité de maintien de substrat.
(JA)
この基板処理装置は、硫酸および過酸化水素水の混合液であるSPMを用いて基板を処理する基板処理装置であって、基板を保持する基板保持ユニットと、前記基板保持ユニットに保持されている基板に供給され当該基板から排出された液体が流入する回収配管と、前記回収配管に流入した液体が送られ、当該液体に基づいて硫酸を含む高温の第1の硫酸含有液を作成するための硫酸含有液作成装置と、前記硫酸含有液作成装置において作成された高温の第1の硫酸含有液に基づいて作成されたSPMを、前記基板保持ユニットに保持されている基板の表面に供給するための表面供給ユニットと、前記硫酸含有液作成装置において作成された高温の第1の硫酸含有液を含む第2の硫酸含有液を、前記基板保持ユニットに保持されている基板の裏面に供給するための裏面供給ユニットと、を含む。
Also published as
Latest bibliographic data on file with the International Bureau