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1. WO2020110682 - SUBSTRATE TREATMENT DEVICE

Publication Number WO/2020/110682
Publication Date 04.06.2020
International Application No. PCT/JP2019/044109
International Filing Date 11.11.2019
IPC
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/677 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677for conveying, e.g. between different work stations
CPC
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/677
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
677for conveying, e.g. between different workstations
Applicants
  • 株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP]/[JP]
Inventors
  • ▲桑▼原 丈二 KUWAHARA Joji
Agents
  • 杉谷 勉 SUGITANI Tsutomu
Priority Data
2018-22583130.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE TREATMENT DEVICE
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置
Abstract
(EN)
This substrate treatment device 1 is provided with a first frame 46, a movable member 51a1, a heat treatment part 37a1, and a transporting mechanism 34a1. The movable member 51a1 is supported by the first frame 46. The movable member 51a1 is movable relative to the first frame 46. The heat treatment part 37a1 is supported by the movable member 51a1. The transporting mechanism 34a1 is supported by the movable member 51a1. The movable member 51a1 moves relative to the first frame 46, whereby the heat treatment part 37a1 moves relative to the first frame 46. The movable member 51a1 moves relative to the first frame 46, whereby the heat treatment part 37a1 moves integrally with the transporting mechanism 34a1.
(FR)
L'invention concerne un dispositif de traitement de substrat 1 comprenant un premier cadre 46, un élément mobile 51a1, une partie de traitement thermique 37a1, et un mécanisme de transport 34a1. L'élément mobile 51a1 est supporté par le premier cadre 46. L'élément mobile 51a1 est mobile par rapport au premier cadre 46. La partie de traitement thermique 37a1 est supportée par l'élément mobile 51a1. Le mécanisme de transport 34a1 est supporté par l'élément mobile 51a1. L'élément mobile 51a1 se déplace par rapport au premier cadre 46, ce qui fait que la partie de traitement thermique 37a1 se déplace par rapport au premier cadre 46. L'élément mobile 51a1 se déplace par rapport au premier cadre 46, ce qui fait que la partie de traitement thermique 37a1 se déplace d'un seul tenant avec le mécanisme de transport 34a1.
(JA)
基板処理装置1は、第1フレーム46と可動部材51a1と熱処理部37a1と搬送機構34a1を備える。可動部材51a1は、第1フレーム46に支持される。可動部材51a1は、第1フレーム46に対して移動可能である。熱処理部37a1は、可動部材51a1に支持される。搬送機構34a1は、可動部材51a1に支持される。可動部材51a1が第1フレーム46に対して移動することによって、熱処理部37a1は、第1フレーム46に対して移動する。可動部材51a1が第1フレーム46に対して移動することによって、熱処理部37a1は、搬送機構34a1と一体に移動する。
Also published as
Latest bibliographic data on file with the International Bureau