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1. WO2020110663 - SUBSTRATE PROCESSING DEVICE

Publication Number WO/2020/110663
Publication Date 04.06.2020
International Application No. PCT/JP2019/043900
International Filing Date 08.11.2019
IPC
B01D 19/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
19Degasification of liquids
B01D 19/02 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
19Degasification of liquids
02Foam dispersion or prevention
B01D 36/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
36Filter circuits or combinations of filters with other separating devices
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
CPC
B01D 19/00
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
19Degasification of liquids
B01D 19/02
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
19Degasification of liquids
02Foam dispersion or prevention
B01D 24/00
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
24Filters comprising loose filtering material, i.e. filtering material without any binder between the individual particles or fibres thereof
B01D 29/00
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
29Other filters with filtering elements stationary during filtration, e.g. pressure or suction filters, or filtering elements therefor
B01D 36/00
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
36Filter circuits or combinations of filters with other separating devices
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP]/[JP]
Inventors
  • 池田 昌秀 IKEDA Masahide
  • 平井 信行 HIRAI Nobuyuki
Agents
  • 前井 宏之 MAEI Hiroyuki
Priority Data
2018-22016226.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING DEVICE
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置
Abstract
(EN)
This substrate processing device (1) processes a substrate (W) using a processing liquid (L1). The substrate processing device (1) comprises a liquid retention part (3), first piping (41, 51), filter parts (43, 53), a processing liquid separation part (7), bubble removal lines (6a, 6b), and second piping (8). The liquid retention part (3) retains the processing liquid (L1). The first piping (41, 51) is connected at one end to the liquid retention part (3) and allows the processing liquid (L1) to flow through. The filter parts (43, 53) are attached to the first piping (41, 51) and remove foreign matter from the processing liquid (L1). The processing liquid separation part (7) retains bubbles that are in the processing liquid (L1) and separate the processing liquid (L1) from the bubbles. The bubble removal lines (6a, 6b) are connected to the filter parts (43, 53) and guide bubbles from the filter parts (43, 53) to the processing liquid separation part (7). The second piping (8) is connected to the processing liquid separation part (7) and guides the processing liquid (L1) that is separated from the bubbles to the liquid retention part (3).
(FR)
La présente invention concerne un dispositif (1) de traitement de substrat destiné à traiter un substrat (W) à l'aide d'un liquide de traitement (L1). Le dispositif (1) de traitement de substrat comprend une partie (3) de rétention de liquide, une première tuyauterie (41, 51), des parties filtre (43, 53), une partie (7) de séparation de liquide de traitement, des conduites (6a, 6b) d'élimination de bulles et une seconde tuyauterie (8). La partie (3) de rétention de liquide permet de retenir le liquide de traitement (L1). La première tuyauterie (41, 51) est reliée au niveau d'une extrémité à la partie (3) de rétention de liquide et peut être traversée par l'écoulement de liquide de traitement (L1). Les parties filtre (43, 53) sont fixées à la première tuyauterie (41, 51) et permettent d'éliminer les matières étrangères du liquide de traitement (L1). La partie (7) de séparation de liquide de traitement permet de retenir des bulles se trouvant dans le liquide de traitement (L1) et de séparer le liquide de traitement (L1) des bulles. Les conduites (6a, 6b) d'élimination de bulles sont reliées aux parties filtre (43, 53) et guident les bulles des parties filtre (43, 53) vers la partie (7) de séparation de liquide de traitement. La seconde tuyauterie (8) est reliée à la partie (7) de séparation de liquide de traitement et guide le liquide de traitement (L1), ayant été séparé des bulles, vers la partie (3) de rétention de liquide.
(JA)
基板処理装置(1)は、処理液(L1)を用いて基板(W)を処理する。基板処理装置(1)は、液貯留部(3)と、第1配管(41、51)と、フィルタ部(43、53)と、処理液分離部(7)と、泡抜きライン(6a、6b)と、第2配管(8)とを備える。液貯留部(3)は、処理液(L1)を貯留する。第1配管(41、51)は、液貯留部(3)にその一端が接続し、処理液(L1)を流通させる。フィルタ部(43、53)は、第1配管(41、51)に取り付けられて、処理液(L1)から異物を除去する。処理液分離部(7)は、処理液(L1)の泡を貯留し、泡から処理液(L1)を分離する。泡抜きライン(6a、6b)は、フィルタ部(43、53)に接続して、泡をフィルタ部(43、53)から処理液分離部(7)へ導く。第2配管(8)は、処理液分離部(7)に接続して、泡から分離された処理液(L1)を液貯留部(3)に導く。
Also published as
Latest bibliographic data on file with the International Bureau