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1. WO2020110619 - SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Publication Number WO/2020/110619
Publication Date 04.06.2020
International Application No. PCT/JP2019/043199
International Filing Date 05.11.2019
IPC
B23K 26/36 2014.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
36Removing material
H01L 21/60 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/301 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301to subdivide a semiconductor body into separate parts, e.g. making partitions
CPC
B23K 26/36
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
36Removing material
Applicants
  • リンテック株式会社 LINTEC CORPORATION [JP]/[JP]
Inventors
  • 四宮 圭亮 SHINOMIYA Keisuke
Agents
  • 特許業務法人樹之下知的財産事務所 KINOSHITA & ASSOCIATES
Priority Data
2018-22121227.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE MANUFACTURING METHOD
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEURS
(JA) 半導体装置の製造方法
Abstract
(EN)
Provided is a semiconductor device manufacturing method comprising: a step of forming a resin layer (13) on a bump formation surface (2A) of a bumped member (2) on which a plurality of bumps (22) have been formed; and a step of irradiating the resin layer (13) with a laser (LB) to remove the resin layer (13) covering the surface of the bumps (22).
(FR)
La présente invention concerne un procédé de fabrication de dispositif à semi-conducteurs comprenant : une étape qui consiste à former une couche de résine (13) sur la surface de formation de bossage (2A) d'un élément (2) pourvu de bossages sur lequel ont été formés une pluralité de bossages (22) ; et une étape qui consiste à exposer la couche de résine (13) à un rayonnement laser (LB) pour éliminer la couche de résine (13) qui recouvre la surface des bossages (22).
(JA)
複数のバンプ(22)が形成されているバンプ付部材(2)のバンプ形成面(2A)に樹脂層(13)を形成する工程と、樹脂層(13)にレーザー(LB)を照射して、バンプ(22)の表面を覆っている樹脂層(13)を除去する工程と、を備える半導体装置の製造方法。
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