Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020110537 - SOLID-STATE IMAGING ELEMENT AND IMAGING DEVICE

Publication Number WO/2020/110537
Publication Date 04.06.2020
International Application No. PCT/JP2019/041930
International Filing Date 25.10.2019
IPC
H04N 5/3745 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/351 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
351Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
H04N 5/355 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
351Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
355Control of the dynamic range
CPC
H04N 5/351
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
351Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
H04N 5/355
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
351Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
355Control of the dynamic range
H04N 5/3745
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 朱 弘博 ZHU, Hongbo
  • 榊原 雅樹 SAKAKIBARA, Masaki
Agents
  • 丸島 敏一 MARUSHIMA, Toshikazu
Priority Data
2018-22347829.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SOLID-STATE IMAGING ELEMENT AND IMAGING DEVICE
(FR) ÉLÉMENT D'IMAGERIE À SEMI-CONDUCTEURS ET DISPOSITIF D'IMAGERIE
(JA) 固体撮像素子、および、撮像装置
Abstract
(EN)
The present invention reduces a circuit size in a solid-state imaging element that detects an address event. This solid-state imaging element is provided with a pixel array unit and a drive circuit. In the solid-state imaging element, logarithmic response pixels that each output an analog signal proportional to the logarithmic value of an incident light amount, and detection pixels that each detect whether or not the amount of change in the incident light amount exceeds a predetermined threshold value and output a detection signal indicating the result of the detection are arranged in the pixel array unit. Moreover, in the solid-state imaging element, the drive circuit drives the logarithmic response pixel and the detection pixel to output the analog signal and the detection signal therefrom, respectively.
(FR)
La présente invention réduit une taille de circuit dans un élément de capture d'image à semi-conducteurs qui détecte un événement d'adresse. Cet élément d'imagerie à semi-conducteurs est pourvu d'une unité de réseau de pixels et d'un circuit de d'excitation. Dans l'élément d'imagerie à semi-conducteurs, des pixels de réponse logarithmique qui délivrent chacun un signal analogique proportionnel à la valeur logarithmique d'une quantité de lumière incidente, et des pixels de détection qui détectent chacun si la quantité de changement dans la quantité de lumière incidente dépasse une valeur seuil prédéterminée et délivrent en sortie un signal de détection indiquant le résultat de la détection sont agencés dans l'unité de réseau de pixels. De plus, dans l'élément d'imagerie à semi-conducteurs, le circuit d'excitation commande le pixel de réponse logarithmique et le pixel de détection pour délivrer en sortie le signal analogique et le signal de détection à partir de celui-ci, respectivement.
(JA)
アドレスイベントを検出する固体撮像素子において、回路規模を削減する。 固体撮像素子は、画素アレイ部と、駆動回路とを具備する。この固体撮像素子において、画素アレイ部には、入射された光量の対数値に比例したアナログ信号を出力する対数応答画素と入射された光量の変化量が所定の閾値を超えたか否かを検出して当該検出結果を示す検出信号を出力する検出画素とが配列される。また、固体撮像素子において、駆動回路は、対数応答画素および検出画素を駆動してアナログ信号および検出信号を出力させる。
Also published as
Latest bibliographic data on file with the International Bureau