Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020110534 - SEALING METHOD, SEALING LAYER, MIXED LIQUID FOR SEALING LAYER FORMATION, METHOD FOR PRODUCING SEALING LAYER, AND SEMICONDUCTOR DEVICE

Publication Number WO/2020/110534
Publication Date 04.06.2020
International Application No. PCT/JP2019/041717
International Filing Date 24.10.2019
IPC
H01L 23/29 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
29characterised by the material
H01L 23/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
31characterised by the arrangement
C08K 5/057 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUSE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
5Use of organic ingredients
04Oxygen-containing compounds
05Alcohols; Metal alcoholates
057Metal alcoholates
C08K 9/04 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUSE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
9Use of pretreated ingredients
04Ingredients treated with organic substances
C08L 63/00 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
63Compositions of epoxy resins; Compositions of derivatives of epoxy resins
H01L 21/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56Encapsulations, e.g. encapsulating layers, coatings
CPC
C08K 5/057
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUse of inorganic or non-macromolecular organic substances as compounding ingredients
5Use of organic ingredients
04Oxygen-containing compounds
05Alcohols; Metal alcoholates
057Metal alcoholates
C08K 9/04
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUse of inorganic or non-macromolecular organic substances as compounding ingredients
9Use of pretreated ingredients
04Ingredients treated with organic substances
C08L 63/00
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
63Compositions of epoxy resins; Compositions of derivatives of epoxy resins
H01L 21/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
H01L 23/29
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
29characterised by the material ; , e.g. carbon
H01L 23/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
Applicants
  • コニカミノルタ株式会社 KONICA MINOLTA, INC. [JP]/[JP]
Inventors
  • 志田 有章 SHIDA, Kuniaki
  • 井 宏元 II, Hiromoto
  • 牧島 幸宏 MAKISHIMA, Yukihiro
Agents
  • 特許業務法人光陽国際特許事務所 KOYO INTERNATIONAL PATENT FIRM
Priority Data
2018-22469730.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEALING METHOD, SEALING LAYER, MIXED LIQUID FOR SEALING LAYER FORMATION, METHOD FOR PRODUCING SEALING LAYER, AND SEMICONDUCTOR DEVICE
(FR) PROCÉDÉ D'ÉTANCHÉITÉ, COUCHE D'ÉTANCHÉITÉ, LIQUIDE MÉLANGÉ POUR FORMATION DE COUCHE D'ÉTANCHÉITÉ, PROCÉDÉ DE PRODUCTION D'UNE COUCHE D'ÉTANCHÉITÉ ET DISPOSITIF À SEMI-CONDUCTEUR
(JA) 封止方法、封止層、封止層形成用の混合液、封止層の製造方法及び半導体装置
Abstract
(EN)
The present invention addresses the problem of providing: a sealing method which prevents a semiconductor element and a component that constitute a semiconductor device from corrosion caused by harmful substances; a sealing layer which is used for the sealing method; a mixed liquid which is used for the formation of the sealing layer; a method for producing a sealing layer; and a semiconductor device which uses the sealing method. A sealing method of the present invention for sealing a semiconductor element and a component that constitute a semiconductor device is characterized by forming a sealing layer by any one of (1) a method 1 which uses a composition that contains an epoxy resin and an organic metal oxide, (2) a method 2 which uses a composition that contains an epoxy resin and a filler that is coated with an organic metal oxide, and (3) a method 3 wherein the component is sealed by means of an organic metal oxide, and is subsequently coated with an epoxy resin.
(FR)
La présente invention aborde le problème consistant à fournir : un procédé d'étanchéité qui protège un élément semi-conducteur et un composant qui constituent un dispositif à semi-conducteur contre la corrosion provoquée par des substances nocives ; une couche d'étanchéité qui est utilisée pour le procédé d'étanchéité ; un liquide mélangé qui est utilisé pour la formation de la couche d'étanchéité ; un procédé de production d'une couche d'étanchéité ; et un dispositif à semi-conducteur qui utilise le procédé d'étanchéité. Un procédé d'étanchéité de la présente invention pour étanchéifier un élément semi-conducteur et un composant qui constituent un dispositif à semi-conducteur est caractérisé par la formation d'une couche d'étanchéité par l'un quelconque parmi (1) un procédé 1 qui utilise une composition qui contient une résine époxy et un oxyde métallique organique, (2) un procédé 2 qui utilise une composition qui contient une résine époxy et une charge qui est revêtue d'un oxyde métallique organique, et (3) un procédé 3 dans lequel le composant est étanchéifié au moyen d'un oxyde métallique organique, et est ensuite revêtu d'une résine époxy.
(JA)
本発明の課題は、半導体装置を構成する半導体素子や部品の有害物質からの腐食を防止する封止方法、それに用いる封止層、当該封止層の形成に用いる混合液、封止層の製造方法と、それを用いた半導体装置を提供することである。 本発明の封止方法は、半導体装置を構成する半導体素子及び部品の封止方法であって、(1)エポキシ樹脂と有機金属酸化物とを含有する組成物を用いる方法1、(2)エポキシ樹脂と、有機金属酸化物で被覆されたフィラーとを含有する組成物を用いる方法2、又は(3)前記部品を有機金属酸化物で封止した後、エポキシ樹脂で被覆する方法3のいずれかにより封止層を形成することを特徴とする。
Latest bibliographic data on file with the International Bureau