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1. WO2020110514 - SUPER-JUNCTION SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUPER-JUNCTION SILICON CARBIDE SEMICONDUCTOR DEVICE

Publication Number WO/2020/110514
Publication Date 04.06.2020
International Application No. PCT/JP2019/041215
International Filing Date 18.10.2019
IPC
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
CPC
H01L 29/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L 29/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
H01L 29/78
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
Applicants
  • 富士電機株式会社 FUJI ELECTRIC CO., LTD. [JP]/[JP]
  • 国立研究開発法人産業技術総合研究所 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP]/[JP]
  • 株式会社 東芝 KABUSHIKI KAISHA TOSHIBA [JP]/[JP]
Inventors
  • 小林 勇介 KOBAYASHI, Yusuke
  • 武井 学 TAKEI, Manabu
  • 京極 真也 KYOGOKU, Shinya
  • 原田 信介 HARADA, Shinsuke
Agents
  • 酒井 昭徳 SAKAI, Akinori
Priority Data
2018-22429429.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUPER-JUNCTION SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUPER-JUNCTION SILICON CARBIDE SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR AU CARBURE DE SILICIUM À SUPER-JONCTION ET SON PROCÉDÉ DE FABRICATION
(JA) 超接合炭化珪素半導体装置および超接合炭化珪素半導体装置の製造方法
Abstract
(EN)
This super-junction silicon carbide semiconductor device includes a first conductive type silicon carbide semiconductor substrate (1), a first conductive type first semiconductor layer (2), a parallel pn region (33) in which a first conductive type first column region (31) for epitaxial growth and a second conductive type second column region (30) for ion implantation are arranged alternately in series, a second conductive type second semiconductor layer (16), a first conductive type first semiconductor region (17), a trench (23), a gate electrode (20) that is provided inside the trench (23) via a gate insulating film (19), and a first electrode (22). The first column region has an impurity concentration of 1.1×1016/cm3 to 5.0×1016/cm3.
(FR)
La présente invention porte sur un dispositif à semi-conducteur au carbure de silicium à super-jonction, comprenant un substrat semi-conducteur de carbure de silicium d'un premier type de conductivité (1), une première couche semi-conductrice du premier type de conductivité (2), une région pn parallèle (33) dans laquelle une première région de colonne du premier type de conductivité (31) servant à une croissance épitaxiale et une seconde région de colonne d'un second type de conductivité (30) servant à une implantation ionique sont disposées alternativement en série, une seconde couche semi-conductrice du second type de conductivité (16), une première région semi-conductrice du premier type de conductivité (17), une tranchée (23), une électrode grille (20) qui est disposée dans la tranchée (23) par l'intermédiaire d'un film d'isolation de grille (19), et une première électrode (22). La première région de colonne présente une concentration d'impuretés est de 1.1×1016/cm3 à 5.0×1016/cm3.
(JA)
超接合炭化珪素半導体装置は、第1導電型の炭化珪素半導体基板(1)と、第1導電型の第1半導体層(2)と、エピタキシャル成長の第1導電型の第1カラム領域(31)とイオン注入の第2導電型の第2カラム領域(30)とが、繰り返し交互に配置された並列pn領域(33)と、第2導電型の第2半導体層(16)と、第1導電型の第1半導体領域(17)と、トレンチ(23)と、トレンチ(23)の内部にゲート絶縁膜(19)を介して設けられたゲート電極(20)と、第1電極(22)と、を備える。第1カラム領域の不純物濃度が1.1×1016/cm3以上5.0×1016/cm3以下である。
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