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1. WO2020110363 - METHOD FOR TREATING SUBSTRATE AND SYSTEM FOR TREATING SUBSTRATE

Publication Number WO/2020/110363
Publication Date 04.06.2020
International Application No. PCT/JP2019/027722
International Filing Date 12.07.2019
IPC
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/302 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
CPC
H01L 21/302
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 久松 亨 HISAMATSU, Toru
  • 勝沼 隆幸 KATSUNUMA, Takayuki
  • 石川 慎也 ISHIKAWA, Shinya
  • 木原 嘉英 KIHARA, Yoshihide
  • 本田 昌伸 HONDA, Masanobu
Agents
  • 特許業務法人酒井国際特許事務所 SAKAI INTERNATIONAL PATENT OFFICE
Priority Data
2018-22589430.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR TREATING SUBSTRATE AND SYSTEM FOR TREATING SUBSTRATE
(FR) PROCÉDÉ DE TRAITEMENT DE SUBSTRAT ET SYSTÈME DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理方法および基板処理システム
Abstract
(EN)
A method for treating a substrate which comprises a step in which a substrate including a mask is prepared, a step in which a film is deposited on the mask, a step in which a reaction layer is formed on a surface of the film, and a step in which energy is given to the reaction layer to thereby remove the reaction layer.
(FR)
L'invention concerne un procédé de traitement d'un substrat qui comprend une étape dans laquelle un substrat comprenant un masque est préparé, une étape dans laquelle un film est déposé sur le masque, une étape dans laquelle une couche de réaction est formée sur une surface du film, et une étape dans laquelle de l'énergie est donnée à la couche de réaction pour ainsi retirer la couche de réaction.
(JA)
基板処理方法は、マスクを備える基板を提供する工程と、マスク上に膜を成膜する工程と、膜の表層に反応層を形成する工程と、反応層にエネルギーを与えて反応層を除去する工程と、を有する。
Also published as
Latest bibliographic data on file with the International Bureau