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1. WO2020110360 - MAGNETORESISTIVE ELEMENT, MAGNETIC SENSOR, REPRODUCING HEAD, AND MAGNETIC RECORDING AND REPRODUCING DEVICE

Publication Number WO/2020/110360
Publication Date 04.06.2020
International Application No. PCT/JP2019/025635
International Filing Date 27.06.2019
IPC
G11B 5/39 2006.01
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127Structure or manufacture of heads, e.g. inductive
33Structure or manufacture of flux-sensitive heads
39using magneto-resistive devices
H01F 10/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
08characterised by magnetic layers
10characterised by the composition
12being metals or alloys
16containing cobalt
H01F 10/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
26characterised by the substrate or intermediate layers
30characterised by the composition of intermediate layers
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H01L 43/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10Selection of materials
CPC
G11B 5/39
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127Structure or manufacture of heads, e.g. inductive
33Structure or manufacture of flux-sensitive heads, ; i.e. for reproduction only; Combination of such heads with means for recording or erasing only
39using magneto-resistive devices ; or effects
H01F 10/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
08characterised by magnetic layers
10characterised by the composition
12being metals or alloys
16containing cobalt
H01F 10/30
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
26characterised by the substrate or intermediate layers
30characterised by the composition of the intermediate layers ; , e.g. seed, buffer, template, diffusion preventing, cap layers
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H01L 43/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
10Selection of materials
Applicants
  • 国立研究開発法人物質・材料研究機構 NATIONAL INSTITUTE FOR MATERIALS SCIENCE [JP]/[JP]
Inventors
  • ファトニ クレスナボンダン FATHONI Kresna Bondan
  • 桜庭 裕弥 SAKURABA Yuya
  • 佐々木 泰祐 SASAKI Taisuke
  • 中谷 友也 NAKATANI Tomoya
  • 三浦 良雄 MIURA Yoshio
  • 宝野 和博 HONO Kazuhiro
Agents
  • 特許業務法人浅村特許事務所 ASAMURA PATENT OFFICE, P.C.
Priority Data
2018-22359229.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MAGNETORESISTIVE ELEMENT, MAGNETIC SENSOR, REPRODUCING HEAD, AND MAGNETIC RECORDING AND REPRODUCING DEVICE
(FR) ÉLÉMENT MAGNÉTORÉSISTIF, CAPTEUR MAGNÉTIQUE, TÊTE DE REPRODUCTION, ET DISPOSITIF D'ENREGISTREMENT ET DE REPRODUCTION MAGNÉTIQUE
(JA) 磁気抵抗効果素子、磁気センサ、再生ヘッドおよび磁気記録再生装置
Abstract
(EN)
The purpose of the present invention is to provide: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device, each of which has high sensitivity to a magnetic field due to the large MR ratio. In a magnetoresistive element provided with a magnetoresistive film according to the present invention, the magnetoresistive film is provided with at least a pair of ferromagnetic layers and a non-magnetic layer positioned between the pair of ferromagnetic layers, each of the pair of ferromagnetic layers is a layer having a body-centered cubic (bcc) crystal structure and represented by the general formula: Co100-pFep (wherein the parameter p satisfies the requirement: 0 ≦ p ≦ 75, and the p values in the pair of ferromagnetic layers are the same as or different from each other), the non-magnetic layer is a layer having a body-centered cubic (bcc) crystal structure and made from Cu, and each of the ferromagnetic layers and the non-magnetic layer is a single crystal (001) layer or a layer in which a (001) crystal plane is preferentially aligned.
(FR)
Le but de la présente invention est de fournir : un élément magnétorésistif comprenant un important taux de variation de la magnétorésistance (taux MR) ; et un capteur magnétique, une tête de reproduction et un dispositif d'enregistrement et de reproduction magnétique, dont chacun présente une sensibilité élevée à un champ magnétique en raison de l'important taux MR. Dans un élément magnétorésistif pourvu d'un film magnétorésistif selon la présente invention, le film magnétorésistif est pourvu d'au moins une paire de couches ferromagnétiques et d'une couche non magnétique positionnée entre la paire de couches ferromagnétiques, chacune de la paire de couches ferromagnétiques étant une couche comprenant une structure cristalline cubique centrée sur le corps (bcc) et représentée par la formule générale : Co100-pFep (le paramètre p satisfaisant l'exigence : 0 ≦ P ≦ 75, et les p valeurs dans la paire de couches ferromagnétiques étant identiques ou différentes les unes des autres), la couche non magnétique est une couche comprenant une structure cristalline cubique centrée sur le corps (bcc) et constituée de Cu, et chacune des couches ferromagnétiques et la couche non magnétique est une couche monocristalline (001) ou une couche dans laquelle un plan cristallin (001) est préférentiellement aligné.
(JA)
大きな磁気抵抗変化率(MR比)を有する磁気抵抗効果素子、ならびに、その大きなMR比による磁場に対する高い感度を有する磁気センサ、再生ヘッドおよび磁気記録再生装置を提供することを目的とする。 本発明の磁気抵抗効果膜を備えた磁気抵抗効果素子は、磁気抵抗効果膜は、少なくとも、一対の強磁性層と、一対の強磁性層の間に位置する非磁性層とを備え、一対の強磁性層のそれぞれは、体心立方(bcc)の結晶構造を有し、一般式Co100-pFeで表される層(パラメータpは、0≦p≦75を満たし、一対の強磁性層のそれぞれにおけるpは、同一または別異である)であり、非磁性層は、体心立方(bcc)の結晶構造を有し、Cuからなる層であり、強磁性層、および、非磁性層のそれぞれは、単結晶(001)層であるか、または、(001)結晶面が優先配向している。
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