Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020110299 - SEMICONDUCTOR DEVICE

Publication Number WO/2020/110299
Publication Date 04.06.2020
International Application No. PCT/JP2018/044221
International Filing Date 30.11.2018
IPC
H01L 21/338 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
338with a Schottky gate
H01L 29/812 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
80with field effect produced by a PN or other rectifying junction gate
812with a Schottky gate
CPC
H01L 29/812
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
80with field effect produced by a PN or other rectifying junction gate ; , i.e. potential-jump barrier
812with a Schottky gate
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 山口 裕太郎 YAMAGUCHI, Yutaro
  • 大塚 友絢 OTSUKA, Tomohiro
  • 半谷 政毅 HANGAI, Masatake
  • 新庄 真太郎 SHINJO, Shintaro
Agents
  • 田澤 英昭 TAZAWA, Hideaki
  • 濱田 初音 HAMADA, Hatsune
  • 中島 成 NAKASHIMA, Nari
  • 坂元 辰哉 SAKAMOTO, Tatsuya
  • 辻岡 将昭 TSUJIOKA, Masaaki
  • 井上 和真 INOUE, Kazuma
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置
Abstract
(EN)
A semiconductor device comprising a plurality of gate fingers (2-1 - 2-8) extending symmetrically from both sides of a gate connection part (2a-1 - 2a-3), a drain electrode (3-1, 3-2) adjacent to both of the gate fingers (2-1 - 2-8) extending from both sides of the gate connection part (2a-1 - 2a-3), and a plurality of source electrodes (4-1 - 4-6) adjacent to the gate fingers (2-1 - 2-8) extending from both sides of the gate connection part (2a-1 - 2a-3), wherein a gate air bridge (8-1 - 8-3) connects the gate connection part (2a-1 - 2a-3) to a gate routing line (6) over a source electrode (4-2, 4-4, 4-6).
(FR)
La présente invention porte sur un dispositif à semi-conducteur comprenant une pluralité de doigts de grille (2-1 - 2-8) partant symétriquement des deux côtés d'une partie de connexion de grille (2a-1 - 2a3), une électrode drain (3-1, 3-2) adjacente aux deux doigts de grille (2-1 - 2-8) partant des deux côtés de la partie de connexion de grille (2a-1 - 2a-3), et une pluralité d'électrodes source (4-1 - 4-6) adjacentes aux doigts de grille (2-1 - 2-8) partant des deux côtés de la partie de connexion de grille (2a-1 - 2a-3), un pont aérien de grille (8-1 - 8-3) connectant la partie de connexion de grille (2a-1 - 2a3) à une ligne de routage de grille (6) au-dessus d'une électrode source (4-2, 4-4, 4-6).
(JA)
ゲート接続部(2a-1~2a-3)の両側から対称的に延びた複数のゲートフィンガー(2-1~2-8)と、ゲート接続部(2a-1~2a-3)の両側から延びたゲートフィンガー(2-1~2-8)の両方に隣接しているドレイン電極(3-1,3-2)と、ゲート接続部(2a-1~2a-3)の両側から延びたゲートフィンガー(2-1~2-8)に個々に隣接している複数のソース電極(4-1~4-6)とを備え、ゲートエアブリッジ(8-1~8-3)が、ソース電極(4-2,4-4,4-6)を跨いでゲート接続部(2a-1~2a-3)とゲート引き回し線路(6)とを接続している。
Latest bibliographic data on file with the International Bureau