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1. WO2020110296 - SPIN-ORBIT TORQUE MAGNETIZATION ROTATION ELEMENT, SPIN-ORBIT TORQUE MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND HIGH-FREQUENCY MAGNETIC ELEMENT

Publication Number WO/2020/110296
Publication Date 04.06.2020
International Application No. PCT/JP2018/044216
International Filing Date 30.11.2018
IPC
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H01L 21/8239 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
H01L 27/105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 29/82 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
82controllable by variation of the magnetic field applied to the device
CPC
H01L 21/8239
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8239Memory structures
H01L 27/105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 29/82
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
82controllable by variation of the magnetic field applied to the device
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
Applicants
  • TDK株式会社 TDK CORPORATION [JP]/[JP]
Inventors
  • 石谷 優剛 ISHITANI Yugo
  • 佐々木 智生 SASAKI Tomoyuki
  • 塩川 陽平 SHIOKAWA Yohei
Agents
  • 棚井 澄雄 TANAI Sumio
  • 荒 則彦 ARA Norihiko
  • 飯田 雅人 IIDA Masato
  • 荻野 彰広 OGINO Akihiro
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SPIN-ORBIT TORQUE MAGNETIZATION ROTATION ELEMENT, SPIN-ORBIT TORQUE MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND HIGH-FREQUENCY MAGNETIC ELEMENT
(FR) ÉLÉMENT DE ROTATION DE MAGNÉTISATION À COUPLE SPIN-ORBITE, ÉLÉMENT À EFFET DE MAGNÉTORÉSISTANCE À COUPLE SPIN-ORBITE, MÉMOIRE MAGNÉTIQUE ET ÉLÉMENT MAGNÉTIQUE À HAUTE FRÉQUENCE
(JA) スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び高周波磁気素子
Abstract
(EN)
This spin-orbit torque magnetization rotation element is provided with: a first ferromagnetic layer; a spin-orbit torque wire having a first surface facing the first ferromagnetic layer and a major axis extending in a first direction in a plan view seen from the layering direction of the first ferromagnetic layer; and an underlayer which contacts a second surface of the spin-orbit torque wire opposite the first surface thereof. The spin-orbit torque wire has, at positions overlapping the first ferromagnetic layer in the plan view seen from the layering direction, a first domain having a first crystal orientation axis and another region having a different crystal state from the first domain. The first crystal orientation axis of the first domain is continuous from the underlayer.
(FR)
Cet élément de rotation de magnétisation à couple spin-orbite est pourvu : d'une première couche ferromagnétique ; d'un fil à couple spin-orbite ayant une première surface faisant face à la première couche ferromagnétique et un axe majeur s'étendant dans une première direction dans une vue en plan vue depuis la direction de stratification de la première couche ferromagnétique ; et d'une sous-couche qui entre en contact avec une seconde surface du fil à couple spin-orbite opposée à la première surface de celui-ci. Le fil à couple spin-orbite a, à des positions chevauchant la première couche ferromagnétique dans la vue en plan vue depuis la direction de stratification, un premier domaine ayant un premier axe d'orientation cristalline et une autre région ayant un état cristallin différent du premier domaine. Le premier axe d'orientation cristalline du premier domaine est continu à partir de la sous-couche.
(JA)
このスピン軌道トルク型磁化回転素子は、第1強磁性層と、第1面が前記第1強磁性層に面し、前記第1強磁性層の積層方向からの平面視で長軸が第1方向に延びたスピン軌道トルク配線と、前記スピン軌道トルク配線の前記第1面と反対の第2面に接する下地層と、を備え、前記スピン軌道トルク配線は、前記積層方向からの平面視で前記第1強磁性層と重なる位置に、第1の結晶配向軸を有する第1ドメインと、前記第1ドメインと結晶状態の異なる他の領域と、を有し、前記第1ドメインの前記第1の結晶配向軸は、前記下地層から連続する。
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