Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020110271 - METHOD FOR PRODUCING BONDED OBJECT AND SEMICONDUCTOR DEVICE AND COPPER BONDING PASTE

Publication Number WO/2020/110271
Publication Date 04.06.2020
International Application No. PCT/JP2018/044068
International Filing Date 29.11.2018
IPC
C23C 20/04 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
20Chemical coating by decomposition of either solid compounds or suspensions of the coating forming compounds, without leaving reaction products of surface material in the coating
02Coating with metallic material
04with metals
H01L 21/52 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
52Mounting semiconductor bodies in containers
CPC
C23C 20/04
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
20Chemical coating by decomposition of either solid compounds or suspensions of the coating forming compounds, without leaving reaction products of surface material in the coating
02Coating with metallic material
04with metals
H01L 21/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
52Mounting semiconductor bodies in containers
H01L 2224/29347
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
29198with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
29298Fillers
29299Base material
293with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29338the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
29347Copper [Cu] as principal constituent
H01L 2224/40225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
39Structure, shape, material or disposition of the strap connectors after the connecting process
40of an individual strap connector
401Disposition
40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
40221the body and the item being stacked
40225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/48227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
48221the body and the item being stacked
48225the item being non-metallic, e.g. insulating substrate with or without metallisation
48227connecting the wire to a bond pad of the item
Applicants
  • 日立化成株式会社 HITACHI CHEMICAL COMPANY, LTD. [JP]/[JP]
Inventors
  • 川名 祐貴 KAWANA Yuki
  • 中子 偉夫 NAKAKO Hideo
  • 根岸 征央 NEGISHI Motohiro
  • 須鎌 千絵 SUGAMA Chie
  • 江尻 芳則 EJIRI Yoshinori
  • 谷中 勇一 YANAKA Yuichi
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 清水 義憲 SHIMIZU Yoshinori
  • 平野 裕之 HIRANO Hiroyuki
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING BONDED OBJECT AND SEMICONDUCTOR DEVICE AND COPPER BONDING PASTE
(FR) PROCÉDÉ DE FABRICATION D'OBJET COLLÉ ET DISPOSITIF SEMI-CONDUCTEUR ET PÂTE DE COLLAGE DE CUIVRE
(JA) 接合体及び半導体装置の製造方法、並びに接合用銅ペースト
Abstract
(EN)
An embodiment of the present invention provides a method for producing a bonded object wherein: the method comprises a step for preparing a laminate in which a first member, a copper bonding paste, and a second member are laminated in said order and a step for sintering the copper bonding paste under a pressure of 0.1-1 MPa; the copper bonding paste contains metal particles and a dispersion medium; the content of metal particles is at least 50 mass% with respect to the total mass of the copper bonding paste; and the metal particles contain at least 95 mass% of submicro copper particles with respect to the total mass of the metal particles.
(FR)
Un mode de réalisation de la présente invention concerne un procédé de fabrication d'un objet collé, ledit procédé comprenant une étape de préparation d'un stratifié dans laquelle un premier élément, une pâte de collage de cuivre, et un second élément sont stratifiés dans cet ordre, et une étape de frittage de la pâte de collage de cuivre sous une pression de 0,1-1 MPa ; la pâte de collage de cuivre contient des particules métalliques et un milieu de dispersion ; la teneur en particules métalliques est d'au moins 50% en masse rapporté à la masse totale de la pâte de collage de cuivre ; et les particules métalliques contiennent au moins 95% en masse de particules de sous-micro cuivre rapporté à la masse totale des particules métalliques.
(JA)
本発明の一態様は、第一の部材、接合用銅ペースト、及び第二の部材がこの順に積層されている積層体を用意する工程と、接合用銅ペーストを、0.1~1MPaの圧力を受けた状態で焼結する工程と、を備え、接合用銅ペーストは、金属粒子及び分散媒を含有し、金属粒子の含有量が、接合用銅ペーストの全質量を基準として、50質量%以上であり、金属粒子が、前記金属粒子の全質量を基準として、95質量%以上のサブマイクロ銅粒子を含有する、接合体の製造方法を提供する。
Latest bibliographic data on file with the International Bureau