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1. WO2020110258 - POLISHING PAD AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2020/110258
Publication Date 04.06.2020
International Application No. PCT/JP2018/043989
International Filing Date 29.11.2018
IPC
B24B 37/24 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
11Lapping tools
20Lapping pads for working plane surfaces
24characterised by the composition or properties of the pad materials
B24B 37/26 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
11Lapping tools
20Lapping pads for working plane surfaces
26characterised by the shape of the lapping pad surface, e.g. grooved
B24D 11/06 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
DTOOLS FOR GRINDING, BUFFING OR SHARPENING
11Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
06Connecting the ends of materials, e.g. for making abrasive belts
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
B24B 37/24
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
11Lapping tools
20Lapping pads for working plane surfaces
24characterised by the composition or properties of the pad materials
B24B 37/26
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
11Lapping tools
20Lapping pads for working plane surfaces
26characterised by the shape of the lapping pad surface, e.g. grooved
B24D 11/06
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
DTOOLS FOR GRINDING, BUFFING, OR SHARPENING
11Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
06Connecting the ends of materials, e.g. for making abrasive belts
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 株式会社大輝 DAIKI CO.,LTD. [JP]/[JP]
Inventors
  • 大石 邦晴 OISHI Kuniharu
  • 海野 達広 UNNO Tatsuhiro
Agents
  • 久米川 正光 KUMEGAWA Masamitsu
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) POLISHING PAD AND METHOD FOR MANUFACTURING SAME
(FR) TAMPON DE POLISSAGE ET SON PROCÉDÉ DE FABRICATION
(JA) ポリッシングパッドおよびその製造方法
Abstract
(EN)
Provided is a polishing pad the size of which can be set freely and which is easily attachable to a polishing device. A polishing pad (1) comprises a plurality of pad pieces (3a–3f), a plurality of joining sections, and a plurality of groove sections (2). Each of the pad pieces (3a–3f) has a planar shape obtained by dividing the polishing pad (1) into a plurality of regions, and the combination of the pad pieces (3a–3f) as a whole forms a polishing layer. The joining sections are disposed along joining boundaries (B) of the pad pieces (3a–3f) and join end surfaces of neighboring pad pieces to sections which can't be integrated. The plurality of groove sections (2) are recessed in stripe shapes in the surface of the polishing layer, and at least a portion thereof correspond positionally to the joining boundaries (B) (joining sections).
(FR)
L'invention concerne un tampon de polissage dont la taille peut être réglée librement, et qui peut être facilement fixé à un dispositif de polissage. Un tampon de polissage (1) comprend une pluralité de pièces de tampon (3a-3f), une pluralité de sections de jonction et une pluralité de sections de rainure (2). Chacune des pièces de tampon (3a-3f) a une forme plane obtenue en divisant le tampon de polissage (1) en une pluralité de régions, et la combinaison des pièces de tampon (3a-3f), en un tout, forme une couche de polissage. Les sections de jonction sont disposées le long de limites de jonction (B) des pièces de tampon (3a-3f) et relient des surfaces d'extrémité de pièces de tampon voisines à des sections qui ne peuvent pas être intégrées. La pluralité de sections de rainure (2) sont évidées dans des formes de bande dans la surface de la couche de polissage, et au moins une partie de celles-ci correspond, en position, aux limites de jonction (B) (sections de jonction).
(JA)
任意のサイズを設定でき、かつ、研磨装置への取り付けが容易なポリッシングパッドを提供する。ポリッシングパッド(1)は、複数のパッド片(3a~3f)と、複数の接合部と、複数の溝部(2)とを有する。パッド片(3a~3f)は、ポリッシングパッド(1)を複数の領域に分割した面形状をそれぞれが有し、これらを組み合わせることによって、全体として研磨層を構成する。接合部は、パッド片(3a~3f)の接合境界(B)に沿って設けられ、隣り合ったパッド片の端面同士を一体不可分に接合する。複数の溝部(2)は、研磨層の表面に筋状に陥没して設けられ、少なくとも一部が、接合境界(B)(接合部)と位置的に対応している。
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