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1. WO2020110088 - HYDROGENATED AMORPHOUS SILICON DETECTOR

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[ EN ]

CLAIMS

1. Detector for ionizing radiation comprising: a support element (6) made of a p-type doped conductive or semiconductor material;

- a substrate in hydrogenated amorphous silicon (10) of given thickness, provided with two parallel and opposite faces in which a first face is placed in contact with said support element (6) and a second face is opposite to the first one;

- a plurality of p-type electrodes (11) extending from said second face of the substrate (10) in the direction of the thickness of said substrate (10), connected to each other by a polarization element (8, 13);

- a plurality of n-type electrodes (12) extending from said second face of the substrate (10) in the direction of the thickness of said substrate, suitable for collecting the charge signal generated at the passage of ionizing radiation in the detector;

- a passivation layer (7) placed at least partially in contact with the second face of the substrate (10) and never being in contact with the support element (6);

- at least one electrode for reading the charge signal collected by one or more of said n-type electrodes (12) and connected to it by a signal reading contact (9) .

2. Detector according to claim 1, wherein at least one of the p-type electrodes (11) is in contact with a polarization element (8) placed on the second face of said substrate.

3. Detector according to claim 2, wherein the polarization element is shaped like a grid (8) .

4. Detector according to claim 1, wherein the p-type electrodes (11) extend over the whole thickness of the substrate (10) until touching the first face of said substrate (10) thus creating an electrical contact with the polarization element (13) through the support element ( 6 ) .

5. Detector according to any one of claims 1-4, wherein the support element (6) is made of a material selected from semiconductors or metals.

6. Detector according to claim 5, wherein the semiconductor material is selected from: silicon, silicon doped or surface treated with chromium, molybdenum, aluminum, platinum.

7. Detector according to claim 5, wherein the metallic material is selected from: stainless steel, aluminum, chromed brass, PCB on which a metallic copper is deposited .

8. Detector according to any one of claims 1-7, wherein the passivation layer (7) is made of a material selected from: Silicon Oxide or Nitride, Aluminum Oxide .

9. Detector according to any one of claims 1-8, wherein the stoichiometric percentage of hydrogen in the hydrogenated amorphous silicon is between 8 and 15%.

10. Detector according to any one of claims 1-9, in which the n-type electrodes (12) are all in columnar form and the p-type electrodes (11) are selected from the columnar and trench shapes.

11. Detector according to any one of claims 1-10, wherein the n-type electrodes (12) and the p-type electrodes (11) are arranged alternately along the parallel lines drawn on the second face of the substrate .

12. Detector according to any one of claims 1-11, wherein the thickness of the substrate (10) is greater than 90 microns.

13. Detector according to any one of claims 1-12, wherein which the n-type electrodes (12) and the p-type electrodes (11) are placed at mutual distances of between 10 and 50 micrometers.

14. Detector according to any one of claims 1-13, which is a pixel detector.

15. Method for using the detector according to any of the claims 1-14 comprising the following main steps: supply the polarization electrode (8) so as to determine a polarization field internal to the substrate (10) ;

- expose the detector to a flow of ionizing radiation for a fixed period of time;

- measure the charge signal collected by the n-type electrodes (12) using the reading electrode.

16. Method according to claim 15, wherein the ionizing radiation consists of X-rays whose energy ranges between 5 to 100 keV.

17. Apparatus comprising the detector according to any one of claims 1-16.

18. Apparatus according to claim 17 selected from: dosimeters for medical use, X-ray detectors for structural analysis and medical diagnostics, particle trackers, calorimeters.