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1. WO2020109991 - NON-VOLATILE RESISTIVE RANDOM ACCESS MEMORY AND A MANUFACTURING METHOD THEREFOR

Publication Number WO/2020/109991
Publication Date 04.06.2020
International Application No. PCT/IB2019/060168
International Filing Date 26.11.2019
IPC
H01L 27/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L 27/24 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
H01L 45/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
CPC
H01L 27/24
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
H01L 45/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
Applicants
  • UNIVERSITY OF SOUTH AFRICA [ZA]/[ZA]
Inventors
  • SRINIVASAN, Ananthakrishnan
  • VALLABHAPURAPU, Sreedevi
  • VALLABHAPURAPU, Vijaya Srinivasu
Agents
  • SPOOR & FISHER
  • MOUBRAY, Hugh Robert
  • GILSON, David Grant
  • KEMP, Mark
  • WHITTAKER, Jonathan Denis
  • COCHRANE, David Hylton
  • ABRAMSON, Lance
  • MCKNIGHT, John Crawford
  • MAHOMED, Shanaaz
  • KAHN, Craig
  • BIAGIO, Dina
  • CILLIERS, Lodewyk Petrus
  • GRANT, Tyron James
  • BEHARIE, Tertia
  • VAN SCHALKWYK, Herman
  • PIENAAR, Danie
  • HANEKOM, Dirk Christiaan
Priority Data
2018/0800027.11.2018ZA
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) NON-VOLATILE RESISTIVE RANDOM ACCESS MEMORY AND A MANUFACTURING METHOD THEREFOR
(FR) MÉMOIRE VIVE RÉSISTIVE NON VOLATILE ET SON PROCÉDÉ DE FABRICATION
Abstract
(EN)
The invention relates to a non-volatile resistive random access memory (ReRAM), a non-volatile ReRAM composition and to a method for manufacturing a non-volatile non-volatile ReRAM. The ReRAM includes a first electrode, a second electrode and a resistive switching/active layer which is located between the first and second electrodes. The switching layer contains chitosan and aluminium doped/incorporated zinc oxide. The switching/active layer may be configured to perform a switching operation according to an applied voltage. The switching/active layer may be in the form of a film. The switching/active layer may be coated/applied onto the first electrode and the second electrode may be placed/applied/provided over the switching/active layer such that the switching/active layer is located/wedged in-between the two electrodes.
(FR)
L'invention concerne une mémoire vive résistive non volatile (ReRAM), une composition de ReRAM non volatile et un procédé de fabrication d'un ReRAM non volatile. Le ReRAM comprend une première électrode, une seconde électrode et une couche de commutation/active résistive qui est située entre les première et seconde électrodes. La couche de commutation contient du chitosane et de l'oxyde de zinc dopé/incorporé à l'aluminium. La couche de commutation/active peut être configurée pour effectuer une opération de commutation en fonction d'une tension appliquée. La couche de commutation/active peut se présenter sous la forme d'un film. La couche de commutation/active peut être appliquée/recouverte sur la première électrode et la seconde électrode peut être placée/appliquée/disposée sur la couche de commutation/active de telle sorte que la couche de commutation/active est située/coincée entre les deux électrodes.
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