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1. WO2020109924 - CHARGE PREAMPLIFIER DEVICE AND RADIATION DETECTING APPARATUS COMPRISING THE DEVICE

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[ EN ]

CLAIMS

1. Charge preamplifier device (100) integrated in a chip of semiconductive material (200) compris ing :

an input (IN) for an input signal (im) and an output (OUT) for an output signal (VOUT) ;

a substrate (202) of semiconductive material doped according to a first type of conductivity; an electrically insulating layer (204) placed on said substrate (202);

a feedback capacitor (Cf) integrated in the chip (200) and comprising a first electrode (3) connected to the input (IN) and a second electrode (2) connected to the output (OUT) ,

characterized in that the second electrode (2) is formed by a doped conductive region (205) having a second type of conductivity, opposite to the first type of conductivity, and integrated in the substrate (202) in order to face the first electrode ( 3 ) .

2. Device (100) according to claim 1, wherein the first electrode (3) comprises a pad (212) con nected to the input (IT) and integrated in said electrically insulating layer (204); said pad fac ing the doped conductive region (205) and being separated from the doped conductive region (205) by an interposed portion of said electrically insulat ing layer.

3. Device (100) according to claim 2, wherein the doped conductive region (205) is made in the substrate (202) in order to include a projection area defined by an orthogonal projection of the pad (212) on the substrate (202) and in order to extend besides said projection area.

4. Device (100) according to claim 1, further comprising: an operational amplifier (1) integrated in the chip of semiconductive material (200) and having: an output terminal connected to said output (OUT), a first input terminal ("-") electrically connected to the first electrode (3) and a second input terminal ("+") .

5. Device (100) according to claim 1, further comprising :

a first interconnecting layer (206) integrated in said electrically insulating layer (204) and having a first portion connected to the doped con ductive region (205) and a second portion connected to said output (OUT) ;

a first electric contact element (208) inter posed between said first portion of the first in- terconnecting layer (206) and the doped conductive region (205) .

6. Device (100) according to claims 2 and 4, further comprising: a second interconnecting layer (210) integrated in said electrically insulating layer (204) and having a portion connected to the pad (212) and a further portion connected to the first input terminal ("-") of the operational am plifier ( 1 ) .

7. Device (100) according to claim 2, wherein the pad (212) comprises at least one first conduc tive layer (214) and said input (IN) is made by a bonding wire (213) or by a bump-bonding fixed to said first conductive layer.

8. Device (100) according to claim 7, wherein the pad (212) further comprises:

a second conductive layer (215) integrated in the electrically insulating layer (204) in order to face the first conductive layer;

at least one second electric contact element (216) connecting the first conductive layer (214) to the second conductive layer (215) .

9. Device (100) according to claim 1, wherein said feedback capacitor (Cf) has a capacitance value comprised between IfF - lOpF.

10. Device (100) according to claim 1, said am plifier is made according to one of the technolo gies selected among: CMOS technology, BiCMOS tech nology, BCD technology.

11. Device (100) according to claim 2, made so that a distance from said pad (212) to said doped conductive region (205) evaluated according to a direction orthogonal to the substrate (202) is com prised between 1 pm and 10 pm.

12. Device (100) according to claim 2, wherein the doped conductive region (205) has a respective surface (211) facing the pad (212) having an area smaller than a corresponding area of the pad (212) .

13. Device (100) according to claim 4, wherein the doped conductive region (205) is made in the substrate (202) in order to face at least partially an interconnecting layer (210) integrated in said electrically insulating layer (204) and having a portion connected to the input (IN) of the device and a further portion connected to the first input terminal ("-") of the operational amplifier (1) .

14. Sensing apparatus (300), comprising:

a radiation sensor (301) configured to convert an electromagnetic radiation into an electric charge signal (SCH) to be supplied to an associated output of the radiation sensor;

a charge preamplifier device (100) connected to the output of the radiation sensor (301) for re ceiving the charge signal (SCH) and for supplying a voltage signal (VOUT) correlated to the electric charge signal (SCH) ;

characterized by the fact said charge preampli fying device (100) is made according to at least one of the preceding claims.

15. Sensing apparatus (300) according to claim 14, wherein said radiation sensor is a sensor se lected among: semiconductor drift detector, pixel detector .